Abstract:Understanding the initiating and suppression mechanisms of existing defects are the key to optimizing the ultra-precision grinding process of hard and brittle materials. This paper discusses the effects of grinding damage on material removal mechanism from the perspectives of residual scratch depth, scratch morphology and normal scratching force, through conducting the contrast variable-depth nano-scratch experiment on polished and ground monocrystalline silicon and establishing the single grain scratching Smoothed Particle Hydrodynamics (SPH) model. The experimental and simulation results show that radial crack on ground silicon surface is almost invisible due to the existence of grinding marks, which indicates that it is difficult to judge the ductile brittle transition (DBT) point by the traditional method of observing cracks. With the increase of penetration depth, pop-in will occur in the residual scratch depth of polished and ground silicon, indicating that the material removal mode has transformed, which provides an important basis for judging the DBT point. The DBT critical normal scratching force (38.93 mN) and residual scratch depth (−0.14 μm) of ground silicon are much higher than those of polished silicon, implying ground silicon is easier to achieve ductile processing. Meanwhile, when the penetration depth is the same, compared to polished silicon, the normal scratching force of ground silicon is generally larger. Finally, a single grain scratching SPH model of pre-stressed silicon is established. And the simulated phenomenon and conclusions are consistent with the experiment, which proves that the surface compressive stress is an important factor that causes the removal characteristics of ground silicon to be different from polished silicon. This study provides a theoretical basis for understanding the ultra-precision grinding removal mechanism of hard and brittle materials.

Subsurface Damage in the Monocrystal Silicon Grinding on Atomic Scale

Effects of grinding speeds on the subsurface damage of single crystal silicon based on molecular dynamics simulations

Investigation of machining mechanism of monocrystalline silicon in nanometric grinding

Effect of grinding damage on cutting force and ductile machining during single grain scratching of monocrystalline silicon

Study on Subsurface Damage of Wafer Silicon Containing Through Silicon Via in Thinning

Nano-grinding Process of Single-Crystal Silicon Using Molecular Dynamics Simulation: Nano-grinding Parameters Effect

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

Atomistic understanding of the subsurface damage mechanism of silicon (100) during the secondary nano-scratching processing

Superimpose mechanism of surface generation process in grinding of monocrystalline silicon using molecular dynamics simulation

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

A Molecular Dynamic Study of Nano-Grinding of a Monocrystalline Copper-Silicon Substrate

Molecular Dynamics Study of Nano-Grinding Behavior for Silicon Wafer Workpieces with Nanoscale Roughness Under Diamond Abrasive Rotation and Translation

Numerical simulation of single abrasive grain grinding of silicon carbide surface

Surface damage mechanism of monocrystalline silicon during single point diamond grinding

Investigation on surface generation mechanism of single-crystal silicon in grinding: Surface crystal orientation effect

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

Experimental Investigation on the Surface and Subsurface Damages Characteristics and Formation Mechanisms in Ultra-Precision Grinding of SiC

Modeling of the Removal Mechanism of Monocrystalline Silicon-Based on Phase Change-Dislocation Theory and Its Edge Chipping Damage During Micro-Grinding

Effect of Grain Size on Nanometric Cutting of Polycrystalline Silicon via Molecular Dynamics Simulation

Molecular dynamics study of crystal orientation effect on surface generation mechanism of single-crystal silicon during the nano-grinding process