Abstract:Molecular dynamics is employed to study the nanoscale high speed grinding process of single crystal copper with rough surface. Material removal behavior of the cooper workpiece through diamond grinding is studied. The effects of texture density, texture direction, texture shape and the tool with rough or smooth surface are thoroughly investigated in terms of atomic trajectories, temperature distribution, radial distribution function, grinding temperature, grinding force, and friction coefficient. It can be found that a larger texture density results in lowering a surface smoothness of workpiece in the local area, and reduces the partial protrusion, specifically when the texture density is greater than 90%. The material removal and the smoothness of ground surface strongly depend upon the effects of texture orientation and shape. The quality of the ground surface at texture orientation parallel with the x-axis is the best. The texture shape that intensely influences the chip and the groove depends on the size of the contact surface, suggesting that the material removal mechanism is roughly the same under different texture shapes. The smooth prismatic tips generate a more chips than the rough prismatic tip, while the volume of the material pileups is less than that of the rough one, which means that the prismatic diamond tip with smooth surface has an absolute advantage than the rough tip to machine nanostructures and greatly improves the material removal rate. These results show that it is possible to control and tune the grinding parameters according to texture density, direction and shape during machining single crystal copper with rough surface, and provides a potential way to improve a surface integrity and a smoothness of machined surface.

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A Molecular Dynamics Investigation into the Mechanisms of Subsurface Damage and Material Removal of Monocrystalline Copper Subjected to Nanoscale High Speed Grinding

Molecular Dynamics Simulation on Grinding Process of Cu-Si and Cu-SiO2 Composite Structures

Molecular Dynamics Study of Nano-Grinding Behavior for Silicon Wafer Workpieces with Nanoscale Roughness Under Diamond Abrasive Rotation and Translation

Investigation of machining mechanism of monocrystalline silicon in nanometric grinding

Subsurface Damage Mechanism of High Speed Grinding Process in Single Crystal Silicon Revealed by Atomistic Simulations

Molecular Dynamics Analyze on Effects of Abrasive Size and Cut Depth on the Monocrystal Silicon Grinding

Subsurface Damage in High-speed Grinding Process of Monocrystalline Silicon Based on Molecular Dynamics

Theoretical Study on the Monocrystal Silicon Nanometric Grinding Process

Molecular Dynamics Study on Grinding Mechanism of Polycrystalline Silicon Carbide

Nano-grinding Process of Single-Crystal Silicon Using Molecular Dynamics Simulation: Nano-grinding Parameters Effect

Effects of grinding speeds on the subsurface damage of single crystal silicon based on molecular dynamics simulations

The Effect of Rough Surface on Nanoscale High Speed Grinding by A Molecular Dynamics Simulation

Mechanisms of subsurface damage and material removal during high speed grinding processes in Ni/Cu multilayers using a molecular dynamics study

Theoretical and Experimental Analysis on Super Precision Grinding of Monocrystal Silicon

Molecular Dynamics Simulation on Subsurface Damage Layer During Nano Grinding Process of Silicon Wafer

Molecular dynamics simulations of nanomachining mechanism and thermal effects of single crystal Cu

Subsurface Damage in the Monocrystal Silicon Grinding on Atomic Scale

Molecular Dynamics Simulations of Nano Grinding of Silicon Carbide (Sic)

Atomic Understanding of the Plastic Deformation Mechanism of 4H-Sic under Different Grain Depth-of-cut During Nano-Grinding

Experimental Investigation on Materials Removal Mechanism During Grinding Silicon Carbide Ceramics with Single Diamond Grain