Abstract:Amorphous SiOx（0≤x≤2.0）films were deposited at 300℃ by plasma-enhanced chemical vapor deposition（PECVD）using SiH4-O2 mixtures.The properties of infrared (IR) absorption for Si—O—Si bonds have been investigated.Two characteristic absorption peaks at around 1050 and 1150cm-1 arise from Si—O—Si stretching mode，and one absorption peak at around 800cm-1 from Si—O—Si bending mode.It is found that Isum/NSi ratio,of the sum of the absorption intensities for both 1000 and 1150cm-1 bands to the density of Si atoms increases linearly with x when x increasing from 0 to 2.0.The proportionality coefficient ASiO(inverse of the oscillator strength) of the Si—O—Si stretching mode is obtained to be 1.48×1019cm-2.On the other hand，the apparent absorbance αapp,in a-SiO2 films is found linear with the increasing film thickness d as αapp=kd,for both 800cm-1 and 1050cm-1 bands.The proportionality coefficients k for 800 and 1050cm-1 bands are obtained to be 3.2×103 and 2.9×104cm-1.By comparison with the values of k reported in other papers,it indicates that k value is closely related to the film density.With the values of ASiO and k above-mentroned,the O content in a-SiOx∶H and film thickness for a-SiO2 can be determined nondestructively using IR absorption techniques.

Optical properties of SIC/SIO2 composite thin film

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Investigation of Amorphous-Sic Thin Film Deposition by RF Magnetron Sputtering for Optical Applications

Influence of Deposition Parameters on Optical Properties of Silicon Oxycarbide Thin Films

Nanostructure and Optical Properties of Sio2 Films Prepared by Reactive Midfrenquency Magnetron Sputtering

Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate

Aging Effect of Optical Properties on Sio2 Films Grown on Si Substrates by Ion Beam Sputtering

Microwave-absorption Properties of Heterostructural SiC Nanowires/sioc Ceramic Derived from Polysiloxane

Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Temperature-dependent Infrared Optical Properties of 3C-, 4H- and 6H-Sic

The Optical Waveguiding Properties of TiO2–SiO2 Composite Films Prepared by the Sol–gel Process

Preliminary Measurement On Transmission Properties Of Sio2 Matrix Ceramic Composite

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Study of the FT-IR for sol-gel coating TiO2/SiO2 composite thin films

Effect of substrate temperature and annealing on the structure and opto-electrical properties of silicon carbide thin films prepared by e-beam evaporation