Efficient Extraction of the Frequency-Dependent K Element and Resistance of VLSI Interconnects

ZENG Shan,YU Wen-jian,ZHANG Meng-sheng,HONG Xian-long,WANG Ze-yi
DOI: https://doi.org/10.3321/j.issn:0372-2112.2007.11.008
2007-01-01
Abstract:In the integrated circuits with frequency above several GHz,parasitic inductive effect has extremely influenced the circuit performance.Therefore,efficient algorithms are required to extract the frequency-dependent parameters which capture the in- ductive effect.The recently proposed K element(inverse of the partial inductance)has a good localization property,and has been widely accepted for the modeling of parasitic inductance.However,most previous works on reluctance extraction did not take high frequency effect into account and were not efficient enough for 3-D complex structure.In this paper,a set of algorithms are proposed to extract the frequency-dependent K element and resistance of 3D interconnects.With a windowing technique,a direct K extraction algorithm,and improvements on solving equations within the window,the proposed method is able to handle complex interconnect structures very efficiently.Compared with FastHenry,the presented method has a speedup ratio from several tens to several hun- dreds,while preserving good accuracy.
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