Achieving Large and Nonvolatile Tunable Magnetoresistance in Organic Spin Valves Using Electronic Phase Separated Manganites.
Wenting Yang,Qian Shi,Tian Miao,Qiang Li,Peng Cai,Hao Liu,Hanxuan Lin,Yu Bai,Yinyan Zhu,Yang Yu,Lina Deng,Wenbin Wang,Lifeng Yin,Dali Sun,X.-G. Zhang,Jian Shen
DOI: https://doi.org/10.1038/s41467-019-11827-0
IF: 16.6
2019-01-01
Nature Communications
Abstract:Tailoring molecular spinterface between novel magnetic materials and organic semiconductors offers promise to achieve high spin injection efficiency. Yet it has been challenging to achieve simultaneously a high and nonvolatile control of magnetoresistance effect in organic spintronic devices. To date, the largest magnetoresistance (~300% at T = 10 K) has been reached in tris-(8-hydroxyquinoline) aluminum (Alq 3 )-based organic spin valves (OSVs) using La 0.67 Sr 0.33 MnO 3 as a magnetic electrode. Here we demonstrate that one type of perovskite manganites, i.e., a (La 2/3 Pr 1/3 ) 5/8 Ca 3/8 MnO 3 thin film with pronounced electronic phase separation (EPS), can be used in Alq 3 -based OSVs to achieve a large magnetoresistance (MR) up to 440% at T = 10 K and a typical electrical Hanle effect as the Hallmark of the spin injection. The contactless magnetic field-controlled EPS enables us to achieve a nonvolatile tunable MR response persisting up to 120 K. Our study suggests a new route to design high performance multifunctional OSV devices using electronic phase separated manganites.