Electromagnetic analysis of thin film bulk acoustic resonator

Shu-rong DONG,Hao JIN,De-miao WANG
DOI: https://doi.org/10.3785/j.issn.1008-973X.2006.09.001
2006-01-01
Abstract:For simulating the electromagnetic (EM) distribution of thin film bulk acoustic resonators (FBAR), a FBAR modelling method was proposed. Through rigorously solving the one-dimensional elasticity piezoelectric linear equations and the three-dimensional Maxwell equations, the continuity boundary conditions of mechanical displacement and traction forces at the interfaces between piezoelectric thin film and electrodes were considered, and the effective permittivity of FBAR was deduced in analytic form. After EM and acoustic field were transformed into an effective permittivity, the piezoelectricity was embodied in the form of the effective permittivity, and the method was simulated in full-wave FBAR based on finite-element method. The results show that the simulation data of the method agree well with those of the measurement. Compared with traditional circuit model, the model designed by the method can implement the field discontinuity simulation and the co-simulation of electromagnetic distribution and piezoelectricity of FBAR.
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