Abstract:We investigated the excitation intensity (Φ) dependent photoluminescence (PL), at room temperature (RT), from GaN-based metal-insulator-semiconductor structures under gate bias (VG) from accumulation to deep depletion resulting in variations of the space charge region width. We found that depending on VG, different Φ-dependencies of the YL band energy position (blueshift or redshift), shape (band enlargement or narrowing) and intensity (signal saturation) can be obtained. In order to explain such an unusual YL behavior, we developed a phenomenological PL model, which is based on the solution of the three-dimensional Poisson's equation, current continuity equations and rate equations, and which takes into account the grain structure of GaN layers and the contribution of interface regions into recombination processes. Our model reproduced well the experimental Φ-dependencies of the YL band intensity. It also predicts that YL arises from the donor-acceptor pair (DAP) recombination in very limited areas (width of several nanometers) inside the depletion regions related to grain/grain interfaces and external crystal surfaces. On this basis, we showed that VG-controlled Φ-dependencies of the YL peak position and shape, can be well explained if we assume that YL is due to DAP-type transitions, in which the final state consists of the Coulomb interaction and strong interaction between the dipole moment of ionized DAP and the depletion region electric field. This recombination mechanism can play a significant role at RT, but should be negligible at low temperatures, where one can expect the significant reduction of interface barriers under illumination.

Role of Edge Dislocations in Enhancing the Yellow Luminescence of N-Type Gan

Role of Edge Dislocation and Si Impurity in Linking the Blue Luminescence and Yellow Luminescence in N-Type GaN Films

Does an Enhanced Yellow Luminescence Imply a Reduction of Electron Mobility in N-Type GaN?

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Nature and Elimination of Yellow-Band Luminescence and Donor–acceptor Emission of Undoped GaN

Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk.

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped Gan

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

First-principle Calculation for Luminescent-Effects of Si and Zn Impurities in GaN

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Carrier transport and luminescence properties of n-type GaN

Mechanism of yellow luminescence in GaN at room temperature

Effect of the V/III Ratio During Buffer Layer Growth on the Yellow and Blue Luminescence in Undoped GaN Epilayer

C and Si Ion Implantation and the Origins of Yellow Luminescence in Gan

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: the Example of Yellow Luminance by GaN: CN+ON and GaN:CN

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

First-principles Study of CN Point Defects on Sidewall Surface of [0 0 0 1]-Oriented GaN Nanowires

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect