Effects of Low Doping Concentration on Interconnected Microstructural Zno : Al Thin Films Prepared by the Sol-Gel Technique

S. W. Xue,X. T. Zu,X. Xiang,H. Deng,Z. Q. Xu
DOI: https://doi.org/10.1051/epjap:2006096
2006-01-01
Abstract:Interconnected microstructural ZnO: Al thin films with low doping concentration (Al/Zn <= 1%) were deposited on ( 0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the ( 002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased.
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