Effect of Al Doping Concentration on the Electrical and Optical Properties of Sol–gel Derived Zn0.87Mg0.13O Thin Film

Lei Meng,Shinsuke Miyajima,Makoto Konagai
DOI: https://doi.org/10.7567/jjap.54.08kb09
IF: 1.5
2015-01-01
Japanese Journal of Applied Physics
Abstract:Zn0.87Mg0.13O thin film was developed by the sol-gel process. The effect of the Al doping concentration on the electrical and optical properties of Zn0.87Mg0.13O thin film was investigated. The lowest resistivity of 7.96 x 10(-3) Omega-cm with an optical bandgap energy of 3.64 eV was achieved at a doping concentration of 0.8 mol% in solution (0.6 at.% in film). Al doping contributes to the decrease of resistivity and the increase of optical bandgap energy, whereas heavy doping of greater than 0.8 mol% shows detrimental effects on the resistivity and film crystallinity. The mobility is dominated by grain boundary scattering. (C) 2015 The Japan Society of Applied Physics
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