Study of the Compensation Voltage on the Boundary Field Layer of the Besiii Drift Chamber

Wu Ling-Hui,Liu Jian-Bei,Qin Zhong-Hua,Chen Chang,Zhuang Bao-An,Chen Yuan-Bo,Wang Yi-Fang,Jin Yan,Liu Rong-Guang,Ma Xiao-Yan,Ma Yuan-Yuan,Tang Xiao,Wang Lan,Xu Mei-Hang,Mang Gui-Fang,Zhu Min-Xuan,Zhu Qi-Ming
DOI: https://doi.org/10.3321/j.issn:0254-3052.2006.07.017
2006-01-01
Abstract:There exists strong left-right asymmetry of the X-T relation in the boundary cell of the BESIII drift chamber. The simulation indicates that this kind of asymmetry can be reduced by applying compensation voltage on the boundary field layer, which is confirmed in a beam test for a prototype chamber. The impact of the compensation voltage of the boundary cell on the spacial resolution and the dE/dx measurement is reported in this paper.
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