Abstract:Recent experimental results have shown that the recoil energies of electrons elastically scattered by light and heavy atoms can be resolved for an energetic electron beam and at large scattering angles. Full understanding of the scattering processes involved is helpful to sample characterization, and for providing more knowledge about electron inelastic mean free path. In this work we use a Monte Carlo simulation method to quantitatively study the energy shift, the Doppler broadening and, especially, the peak intensity ratio for an overlayer/substrate sample. Recoil energy in the electron elastic scattering events is calculated on the basis of our previous Monte Carlo simulation model by taking account of the kinetic energy of atoms. An anisotropic distribution of the velocity direction of the atoms, the Maxwell-Boltzmann thermal energy distribution and also the multiple scattering of electrons are considered in the simulation. By introducing a polarized momentum a good agreement has been obtained on the position shift of the quasi-elastic peak between the calculation and experiment. The calculation also shows a quantitative agreement with the experimental results on the peak intensity ratio between different elements for a Ge/C overlayer sample. It is illustrated that the multiple-scattering effect is remarkable for a high energy beam.

Monte Carlo Simulation of Electron Transmission Through Masks in Projection Electron Lithography

Monte Carlo Simulation of Electron Transmission Through the Scattering Masks with Angular Limitation for Projection Electron Lithography

Monte Carlo Simulation of Projection Electron Beam Lithography

Mask characteristics for projection electron-beam lithography with demagnification imaging

Analysis and Research on Monte Carlo Simulation of the Low-Energy Electron Beam Lithography Process

Monte Carlo Simulation of High-Energy Electron Beam Lithography Process

Monte Carlo simulation for low-energy electron lithography

Theoretical Study Of Low-Energy Electron Penetration In Resist-Substrate Target By Monte Carlo Simulation

Simulation of the Proximity Effect of Electron Beam Lithography

Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method

Monte Carlo Simulation of Incident Electrons Passing Through Thin Metal Layer

Proximity Effect In Electron Beam Lithography

Impact of Molybdenum/silicon Multilayer Structure on Extreme Ultraviolet Mask Fabrication

Combined Monte Carlo Method with Constructive Solid Geometry Modeling for the Simulation of Image Contrast in Scanning Electron Microscopy

Formulation for simulating the bi-layer attenuated phase shift contact hole diffraction in lithography

Simulation of Electron Scattering and Transmission in Characterization of Thick Films by Scanning Transmission Electron Microscopy

Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield

Monte Carlo Simulation Study of Quasi-Elastic Electron Scattering from an Overlayer/Substrate System

A New Simulation Method for 3-D Electron Beam Lithography

A Fast Approach to Model EUV Mask 3D and Shadowing Effects

Comprehensive and Quantitative Characterization and Analysis Method of 3D Mask Effect for Lithography Simulation