Abstract:Electron beam lithography is a critical technology for achieving high-precision nanoscale patterning. The presence of resist residues in the structures can significantly affect subsequent processes such as etching and lift-off. However, the evaluation and optimization of resist residues currently relies on qualitative observations like scanning electron microscopy (SEM), necessitating multiple experiments to iteratively optimize exposure parameters, which is not only labor-intensive but also costly. Here, we propose a quantitative method to evaluate resist residues. By processing the obtained SEM images using a threshold segmentation algorithm, we segmented the resist structure region and the residual resist region in the images. The grayscale values of these two regions are identified, and the residues are quantified based on the ratio of these values. Furthermore, a relationship curve between the residue amount and the exposure dose is plotted to predict the optimal exposure dose. To validate this method, we fabricated hydrogen silsesquioxane annular grating structures with 30 nm linewidth and analyzed the residue levels over an exposure dose range of 2000-2500μC cm-2, predicting the optimal dose to be 1800μC cm-2and confirming this through experiments. Additionally, we applied the method to polymethyl methacrylate and ZEP-520A structures, achieving similarly accurate results, further confirming the method's general applicability. This method has the potential to reduce experimental costs and improve yield and production efficiency in nano fabrication.

Monte Carlo Simulation of Projection Electron Beam Lithography

Monte Carlo Simulation of Electron Transmission Through the Scattering Masks with Angular Limitation for Projection Electron Lithography

Monte Carlo Simulation of Electron Transmission Through Masks in Projection Electron Lithography

Monte Carlo simulation for low-energy electron lithography

Monte Carlo Simulation of High-Energy Electron Beam Lithography Process

Simulation of the Proximity Effect of Electron Beam Lithography

Analysis and Research on Monte Carlo Simulation of the Low-Energy Electron Beam Lithography Process

Theoretical Study Of Low-Energy Electron Penetration In Resist-Substrate Target By Monte Carlo Simulation

Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method

Mask characteristics for projection electron-beam lithography with demagnification imaging

Simulation and Analysis of Low-Energy Electron Beam Lithography on Topographical Substrates

A New Simulation Method for 3-D Electron Beam Lithography

Proximity Effect In Electron Beam Lithography

Simulation of Projection Lithography Based on FDTD Method

Imaging simulation of maskless lithography using a DMD™

Monte Carlo Simulation of Incident Electrons Passing Through Thin Metal Layer

Superiority of Langmuir-Blodgett resist films in electron beam lithography as demonstrated by the backscattering yield

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm

Mask-Shifting-Based Projection Lithography for Microlens Array Fabrication

Fast lithography simulation method of complex mask pattern with large-area

Formulation for simulating the bi-layer attenuated phase shift contact hole diffraction in lithography