Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Observation of Visible Luminescence from Indium Nitride at Room Temperature

Optical Properties of InN Films Grown by MOCVD

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Photoluminescence of N‐inn with Low Electron Concentrations

Observation of photogalvanic current for interband absorption in InN films at room temperature

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

Unusual Properties of the Fundamental Band Gap of InN

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Acceptor States in the Photoluminescence Spectra of N-Inn

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Critical point transitions of wurtzite indium nitride

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Growth and Depth Dependence of Visible Luminescence in Wurtzite Inn Epilayers

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Study on the Photoluminescence Properties of Inn Films

Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Photoluminescence and Absorption in InGaN Films with InN Segregation

Intensive Luminescence from a Thick, Indium-Rich In0.7Ga0.3N Film

Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

Intense Photoluminescence Emission from Amorphous Indium Oxynitride Thin Films by Filtered Cathodic Vacuum Arc Technique

Short-wavelength Photoluminescence from Silicon and Nitrogen Coimplanted SiO2 Films