Abstract:Nitrogen-doped Czochralski (NCZ) silicon has been a base material for integrated circuits. The interaction between nitrogen (N) and interstitial oxygen (Oi) atoms in the low temperature regime (300–650 °C), which leads to N–O complexes in the form of NOx (x = 1, 2, or 3), forms a series of shallow thermal donors (denoted as N–O STDs). Such N–O STDs are detrimental to the stability of electrical resistivity of NCZ silicon. In this work, we have experimentally investigated the elimination of N–O STDs in NCZ silicon by means of conventional furnace anneal (CFA) and rapid thermal anneal at elevated temperatures ranging from 900 to 1250 °C, aiming to explore the underlying mechanism. It is found that most of the N–O STDs formed in NCZ silicon can be eliminated by a very short period of anneal at the aforementioned temperatures, providing solid evidence for the viewpoint that the elimination of N–O STDs is ascribed to the decomposition of NOx complexes. Somewhat unexpectedly, the residual N–O STDs are much more after the 1250 °C/2 h CFA than after the 900 °C/2 h or 1000 °C/2 h counterpart, which is found to be due to the fact that more nitrogen pairs [(N2)s] are remaining after the 1250 °C/2 h CFA. It is proposed that most of the (N2) atoms are involved in the growth of grown-in oxide precipitates during the 900 or 1000 °C/2 h CFA. The first-principles calculations and molecular dynamics simulation indicate that the elimination of N–O STDs is essentially ascribed to the destruction of “NO ring” that is the core of NOx complexes. Furthermore, based on the experimental and theoretical results, we have made a thorough thermodynamic analysis to account for the details of elimination of N–O STDs as revealed in this work. It is believed that our experimental and theoretical studies have gained more insight into the N–O STDs in NCZ silicon.

In situ observations of the pest oxidation process of NbSi2 at 1023 K

Oxidation kinetics and high temperature in-situ observation of the oxidation behaviour of NbSi 2 at 1023 K

Microstructural Effect on Oxidation Kinetics of NbSi2 at 1023 K

A Comparison of the Oxidation Behaviors of Poly-Crystalline and Single Crystalline Nbsi2 at 1023 K

Growth of Single Crystals and Low Temperature Oxidation Behaviors of MoSi2 and NbSi2

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Oxidation of stoichiometric poly- and single-crystalline MoSi2 at 773 K

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

In Situ Full-Field Measurement of Surface Oxidation on Ni-based Alloy Using High Temperature Scanning Probe Microscopy.

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

INVESTIGATION FOR THE OXIDATION BEHAVIOR OF NIOBIUM SILICIDES BY X-RAY DIFFRACTION

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

On the oxidation mechanism of niobium-base in situ composites

In situ measurement of oxidation evolution at elevated temperature by nanoindentation

In situ determination of high-temperature oxidation evolution using micro-pillar array and scanning probe microscopy

Observation on the Interface of Α-Al2o3/cr2o3: Prepared by Oxidation of Al45Cr7

On the high-temperature oxidation behavior of a niobium-bearing high nickel-chromium alloy: microstructural evolution and implications on oxidation mechanisms

Oxidation Behavior of Amorphous and Nanocrystalline SiBCN Ceramics – Kinetic Consideration and Microstructure

Oxidation Behaviours of MoSi<sub>2</sub> Single Crystal at the Temperatures of 773K and 1473K

Oxidation Behaviours of MoSi<sub>2</sub> Single Crystal at the Temperatures of 773K and 1473K

In situ observations of the pest oxidation process of NbSi2 at 1023 K

Oxidation kinetics and high temperature in-situ observation of the oxidation behaviour of NbSi 2 at 1023 K

Microstructural Effect on Oxidation Kinetics of NbSi2 at 1023 K

A Comparison of the Oxidation Behaviors of Poly-Crystalline and Single Crystalline Nbsi2 at 1023 K

Growth of Single Crystals and Low Temperature Oxidation Behaviors of MoSi2 and NbSi2

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Oxidation of stoichiometric poly- and single-crystalline MoSi2 at 773 K

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

In Situ Full-Field Measurement of Surface Oxidation on Ni-based Alloy Using High Temperature Scanning Probe Microscopy.

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

INVESTIGATION FOR THE OXIDATION BEHAVIOR OF NIOBIUM SILICIDES BY X-RAY DIFFRACTION

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

On the oxidation mechanism of niobium-base in situ composites

In situ measurement of oxidation evolution at elevated temperature by nanoindentation

In situ determination of high-temperature oxidation evolution using micro-pillar array and scanning probe microscopy

Observation on the Interface of Α-Al2o3/cr2o3: Prepared by Oxidation of Al45Cr7

On the high-temperature oxidation behavior of a niobium-bearing high nickel-chromium alloy: microstructural evolution and implications on oxidation mechanisms

Oxidation Behavior of Amorphous and Nanocrystalline SiBCN Ceramics – Kinetic Consideration and Microstructure

Oxidation Behaviours of MoSi<sub>2</sub> Single Crystal at the Temperatures of 773K and 1473K

Oxidation Behaviours of MoSi&lt;sub&gt;2&lt;/sub&gt; Single Crystal at the Temperatures of 773K and 1473K

Oxidation Behaviours of MoSi<sub>2</sub> Single Crystal at the Temperatures of 773K and 1473K