Preparing superdense ZAO target by doping Al2O3 nanopowder

JinPeng Fan,Daqing Zhao,MinSheng Wu,Minchao Dong

2005-01-01

Abstract:By doping Al2O3, the Al-doped ZnO (ZAO) target with ultrahigh relative density (R.D > 99.0% ) was obtained with pressureless sintering. It was due to extremely high surface area of Al2O3 powder, uniform sintering of green compact and avoidance of big pore formation.

What problem does this paper attempt to address?

Effects of Al2O3 doping on the microstructural evolution and densification process of AZO targets

Xiaokai Liu,Benshuang Sun,Xueyun Zeng,Zhongheng Zuo,Wenyu Zhang,Zhijun Wang,Chaofei Liu,Lijia Chen,Yongchun Shu,Yang Liu,Jilin He

DOI: https://doi.org/10.1016/j.ceramint.2022.02.167

IF: 5.532

2022-06-01

Ceramics International

Abstract:Aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) slurries with high solid content and low viscosity were prepared by milling, and a new pressure slip casting technology was used to produce green compacts. Based on the shrinkage data obtained from thermal expansion experiments, activation energies for the densification of AZO and ZnO at different heating rates were calculated by the master sintering curve (MSC) method, and activation energies for grain growth were separately calculated. The optimal sintering process of AZO targets was investigated by the two-step sintering method, and AZO targets with a relative density of 99.8% and a grain size of 3.89 μm were obtained.

materials science, ceramics
In-Situ Doping Preparation of Al-Doped Zno Films Via Pulsed Laser Co-Ablation of Zn and Al Targets with Assistance of Oxygen Plasma

Qinghu You,Peipei Liang,Yanli Li,Hua Cai,Xu Yang,Feiling Huang,Jian Sun,Ning Xu,Jiada Wu

DOI: https://doi.org/10.1016/j.matlet.2014.10.081

IF: 3

2015-01-01

Materials Letters

Abstract:An in-situ doping method for the preparation of Al-doped ZnO (AZO) thin films based on pulsed laser co-ablation of Zn and Al targets with the assistance of an oxygen plasma is reported. The deposited films were characterized for morphological, structural, optical and electrical properties and the effects of post-deposition annealing. The films have a smooth surface, dense structure and well-distributed composition, and show high optical transparency and electrical conductivity. Annealing in 5%H2+95%N2 mixed gas results in the improvement in structural, crystal, optical and electrical properties. Compared with undoped ZnO, the AZO films exhibit a blue shift in absorption edge and an increase of band gap. This method also has potential for preparing AZO and other doped films with different dopant concentrations.
Two-Step Sintering of Aluminum-Doped Zinc Oxide Sputtering Target by Using A Submicrometer Zinc Oxide Powder

Ming-Wei Wu

DOI: https://doi.org/10.1016/j.ceramint.2012.04.076

IF: 5.532

2012-01-01

Ceramics International

Abstract:Aluminum-doped zinc oxide (AZO) is a potential substitute for tin-doped indium oxide due to its versatility. The properties of AZO films are related to those of the AZO sputtering target. To improve the performances of AZO targets, two-step sintering was used to densify a submicrometer zinc oxide (ZnO) powder with a size of 0.4 mu m to produce both AZO and ZnO targets.The results showed that the submicrometer ZnO powder cannot be densified by two-step sintering due to its coarse particle size and hexagonal structure. However, a 2 wt% additive of Al2O3 in ZnO can modify the kinetic window of two-step sintering and help in the densification. Using two-step sintering, the sintered density of the AZO target can be improved from 97.4% to 99.8%. The grain size is also reduced by 60%, from 9.1 mu m to 3.6 mu m. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Oxygen Interstitial Mediated Effective Doping of Al in ZnO:Al Films Prepared by Magnetron Sputtering

Shiliu Yin,Jieni Li,Mandar M. Shirolkar,Ming Li,Haiqian Wang

DOI: https://doi.org/10.1016/j.matlet.2016.05.072

IF: 3

2016-01-01

Materials Letters

Abstract:How to increase the doping efficiency in ZnO:Al (AZO) films is a longstanding question and a hard nut to crack. In the present work, we report an oxygen interstitial mediated doping effect for AZO films prepared by magnetron sputtering. The concentration of oxygen interstitials (Oi) in the as-grown films is tailored by changing the oxygen partial pressure during sputtering. Although the Al donors are temporarily passivated by Oi, they are easily reactivated through the removal of Oi by post-annealing in hydrogen at 500°C. Our results show that the as-grown film which has the highest Oi concentration turns out to have the highest carrier concentration after hydrogen annealing, and the doping efficiency is increased by ~10% because of the oxygen interstitial mediated doping effect. We infer that although Oi deactivate Al donors in the as-grown films, they favor the distribution of the doped Al at the atomic level and the formation of Al substituting at Zn sites (AlZn), and thus, increase the effective Al donors after hydrogen annealing.
Fabrication and properties of ZAO powder, sputtering target materials and the related films

Wei Shao,Ruixin Ma,Bin Liu

DOI: https://doi.org/10.1016/S1005-8850(06)60071-6

2006-01-01

Abstract:Aluminum-doped zinc oxide (ZnO: Al), abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of (002) crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.
Directed oxidation growth of Al-Si-Zn alloy

Jing-zhong ZHAO,Ji-qiang GAO,Zhi-hao JIN

DOI: https://doi.org/10.3321/j.issn:1004-0609.2005.02.019

2005-01-01

The Chinese Journal of Nonferrous Metals

Abstract:The effects of Zn dopant introduced with metal and oxidation on Al-Si alloy directed oxidation at high temperature in air were studied through TG analysis. The results show that Al_2O_3/Al composites are produced when Zn content of alloy exceeds 3%. The incubation period of Al-Si-Zn alloy direct oxidation process is shorten and the contents of composites growth are increased with increase of Zn content. The optimum content of ZnO powder used to dope on the ZLD104 alloy surface is 31mg/cm~2, the incubation period of ZLD104 alloy postpones and the contents of composites decrease when the content of ZnO exceeds. In addition, doping with ZnO powder have more significant advantage than adding Zn metallic, which make Al_2O_3/Al composite the oxidation grow with the gloss way, form the cell-shape crystal and can produce more dense composites.
In situ doping of ZnO nanowires using aerosol-assisted chemical vapour deposition

Swee-Yong Pung,Kwang-Leong Choy,Xianghui Hou,Keith Dinsdale

DOI: https://doi.org/10.1088/0957-4484/21/34/345602

IF: 3.5

2010-08-27

Nanotechnology

Abstract:An in situ doping approach of producing Al-doped ZnO NWs was demonstrated using an aerosol-assisted chemical vapour deposition (AA-CVD) technique. In this technique, Zn precursor was kept in the middle of a horizontal tube furnace whereas the dopant solution was kept in an aerosol generator, which was located outside the furnace. The Al aerosol was flowed into the reactor during the growth of NWs in order to achieve in situ doping. Al-doped ZnO NWs were synthesized as verified by the combination of XRD, TEM/EDS and TOF-SIMS analysis. Highly (00.2) oriented ZnO seed layers were used to promote vertically aligned growth of Al-doped ZnO NWs. Lastly, a growth mechanism of vertically aligned Al-doped ZnO NWs was discussed.
Investigation on the Preparation and Properties of Monodispersed Al2O3ZrO2 Nanopowder Via Co-precipitation Method

Mei Zhou,Linfeng Xu,Xiuan Xi,Ping Li,Wubin Dai,Wenli Zhu,Anze Shui,Lingke Zeng

DOI: https://doi.org/10.1016/j.jallcom.2016.03.265

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:With Al2O3 as inhibitor (which can be etched after calcination), monodispersed Al2O3-ZrO2 nanopowder was successful prepared by co-precipitation method. The as-prepared powders were characterized by acoustic particle sizer (APS), SEM, TEM and XRD, respectively. Crystalline and non-agglomerated nanometric Al2O3-ZrO2 powders with very small crystallite size (similar to 7 nm) and narrow size distribution can be obtained. The relative yield was effected dramatically by pH and the ratio of M-AHC: M-Zr. Green bodies have an ultrafine uniform microstructure without apparent macropore through 200 MPa CIP treatment. The relative density of the grains can be reached to similar to 98.2% by sintering at 1050 degrees C for 4 h, with an average grain size degrees 39 nm. (C) 2016 Elsevier B.V. All rights reserved.
Preparation and Properties of Aluminum-Doped Zinc Oxide Ultrafine Powders

Shu-gang CHEN,Lin-feng XU,Shu-mei WANG,An-ze SHUI

DOI: https://doi.org/10.3969/j.issn.1000-985X.2013.02.025

2013-01-01

Abstract:Aluminum-doped zinc oxide (AZO) ultrafine powders were synthesized by the homogeneous precipitation method with Zn(NO3)2· 6H2O and Al(NO3)3·9H2O as raw materials, and the AZO ultrafine powders were characterized by XRD, SEM, nanoparticle size analyzer and Four-point probe, resistivity. The effects of reaction temperature, calcination temperature, reactant concentration, aluminum dopant content and dispersant content on shape, size and resistivity of the AZO ultrafine powders were examined in detail. The experimental results show that the ZAO powders have the wurtzite structure; the formation of ZAO crystal phase is good at the calcination temperature 550°C; With increasing the aluminum dopant content, the resistivity of the ZAO powders decreases, and the lattice parameters decrease, however, when the dopant content exceeds 2.0 mol%, the spinel phase is produced, and the resistivity begins to increase.
Preparation of ZAO powder and investigation on its infrared emissivity

Xiaowei Wu,FENG Yu-jie,YanKun Liu,武晓威,冯玉杰,刘延坤

2010-01-01

Abstract:According to the basic infrared stealth mechanism of low infrared emissivity powders, the ZAO powder materials were prepared by liquid coprecipitation method, and the starting materials were Zn(NO3) 6H2O and Al(NO3)39H2O. The process parameters were obtained, and the relationship between technology parameters and infrared emissivity was investigated. The temperature of thermal treatment, crystal structure and surface micrograph of ZAO powder was analyzed by the help of TG-DTA, XRD and SEM. The infrared stealth performance of ZAO powder was studied by IR-2 emissivity spectroscopy. Results showed that the infrared emissivity was the lowest when pH was 8.0, calcination temperature was 1100°C, calcination time was 2 h, and the Al2O3 doping content was 3% (mass percentage). The crystal structure of doped ZAO powder was lead-zinc, and there exists distortion of crystal lattice in nanocrystalline ZnO. The average particle size was 10 μm. The lowest infrared emissivity reached to 0.61 at between 8 μm and 14 μm. It means that the ZAO powders will be excellent infrared stealthy materials.
Effects of Al doping on the optical and electrical properties of pre-synthesized ZnO powders by solid state method

Chundong Li,Jinpeng Lv,Zhiqiang Liang

DOI: https://doi.org/10.1007/s10854-012-0645-5

2012-01-01

Abstract:White and fluffy Al-doped zinc oxide powders were fabricated using ZnO and Al(C 3 H 7 O) 3 powders by a solid state method. The effects of Al doping on microstructure, electrical and optical properties were systematically studied. XRD and Raman results show that the Al-doped powders have a pure hexagonal wurtzite structure. The resistivity of ZnO could be decreased from 10 8 to 10 2 Ω cm with the Al doped concentration of 3 at.%. Meanwhile, the obtained powders exhibited high diffuse reflectance in visible region, intense UV emission without deep level emission and good environmental stability. Results reveal that the optical property of the powders has an intimate relationship with the electrical property. The decline of the diffuse reflectance at visible wavelengths and the strong IR absorption were due to the increase of the free electron concentration. Al doping leads to quenching of defect related visible band emission, and we surmise that the defect centers are mainly related to oxygen vacancies ( V O ) and zinc vacancies ( V Zn ). Al doping mechanism was also tentatively explored.
Study on the preparation and the film-forming properties of Mo-and Al-doped ZnO ceramic targets

Zhaoyang Li,Bin Li,Jiwen Li,Yahu Song,Yongwei Wang,Zhiyong Chen,Yixu Niu

DOI: https://doi.org/10.1007/s10854-024-13870-0

2024-11-29

Journal of Materials Science Materials in Electronics

Abstract:In this paper, ZnO, AZO, MZO, and MAZO ceramic targets and films were prepared by spark plasma sintering technology and RF magnetron sputtering technology, respectively. First, the influence of doping Mo and Al atoms on the properties of ZnO targets was studied. The results show that the self-made targets have good crystallization properties. The introduction of Mo and Al atoms improves the sintering activities, the relative densities, and conductivities of AZO, MZO and MAZO targets. Compared with AZO targets, the relative densities of the MZO and MAZO targets are significantly increased. Then, the film-forming properties of targets were studied. In terms of electrical properties: the conductivity, mobility and carrier concentration of MZO, AZO and MAZO films are improved after doping Mo and Al atoms. Compared with AZO films, the resistivities of MZO and MAZO films are effectively reduced. However, after doping Mo atoms, the absorption rate and extinction coefficient of MZO films increase, and the transmittance decreases. It is worth noting that Mo-Al co-doping can eliminate the adverse effects of Mo single-doping on the optical properties of ZnO-based films. Finally, the MAZO films with excellent photoelectric properties were obtained (transmittance: 89.31%, resistivity: 3.36 × 10 −4 Ω·cm).

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Preparation and Characterization of Aluminum Doped ZnO

NIE Dengpan,ZHANG Yu,XUE Tao,LIU Sijun

DOI: https://doi.org/10.3969/j.issn.1002-6886.2009.01.036

2009-01-01

Abstract:Al doped ZnO was prepared by solid reaction method.Red shift of ZnO was observed by Al doped,which indicate that the Al has entered into ZnO lattice,and the solid solubility limit of Al in ZnO was 2.4%mol determined by X-ray diffraction.Effect of Al content on powder resistivity was high,and 2.4%mol Al doped ZnO showed better conductivity and lower resistivity.
Synthesis and Properties of Close Packed ZnO:Al Submicro-Rods Deposited by Pulsed Laser Ablation

Z. W. Liu,C. K. Ong

DOI: https://doi.org/10.1016/j.vacuum.2012.03.060

IF: 4

2012-01-01

Vacuum

Abstract:Al-doped ZnO (AZO) semiconducting thin films consisting of perpendicularly aligned submicro-rods were deposited on silicon substrate by conventional pulsed laser ablation. No catalyst was used in this process. It was found that the rod structure can be grown at relatively high oxygen pressures (1-20 Torr) and relatively high substrate temperatures (550-700 degrees C). Low resistivity and high carrier concentration can be obtained in these Al-doped ZnO rods with relatively high Al concentrations. Increasing Al doping reduces the electric resistivity and increase carrier concentration. The photoluminescence property measurement indicates an increased UV emission with a small amount Al doping and reduced UV emission with further increase of Al concentration. (C) 2012 Elsevier Ltd. All rights reserved.
Study of sintering mechanism and characteristics of ZBO target

Tianya Hou,Gong Zhang,Daming Zhuang

2006-01-01

Abstract:Boron-doped zinc oxide (ZBO) target material was developed by sintering of ZnO and B 2O 3 powders at a temperature ranging from 1200°C-1350°C. The influence of dopant content and sintering temperature on ZBO microstructures was studied with scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that as sintering temperature rises, both the grain size and the density of ZBO increase. Interesting finding is that considerable amount of B 2O 3 volatilizes. Twice as much the B 2O 3 content should be added to the mixture before sintering.
Fabrication of nanostructure Al2O3/ZrO2 (Y2O3) eutectic by combustion synthesis melt-casting under ultra-high gravity

Mei Lin,Mai Peilin,Li Jiangtao,Chen Kexin

DOI: https://doi.org/10.1016/j.matlet.2009.10.008

IF: 3

2010-01-01

Materials Letters

Abstract:A novel method for preparing Al2O3/ZrO2 (Y2O3) eutectic was developed by combining combustion synthesis with melt-casting under ultra-high gravity (CSMC-UHG). The application of UHG=800g resulted in a high relative density of 99.8%, and an orientation-growth along the UHG direction. The microstructure was composed of aligned growth regimes containing a triangular dispersion of orderly ZrO2 rods in Al2O3 matrix with a spacing of 300nm. The eutectic had a high fracture toughness up to 17.9MPa·m1/2, which was mainly attributed to the nanostructure and the elastic bridge effects of the aligned ZrO2 rods.
High Quality Al‐doped ZnO Thin Films Deposited Using Targets Prepared by Chemical Coprecipitation

L. Cai,G. Jiang,C. Zhu,D. Wang

DOI: https://doi.org/10.1002/pssa.200824416

2009-01-01

Abstract:In order to grow high-quality aluminum-doped zinc oxide films (AZO), the chemical coprecipitation method was adopted to synthesize ultra-fine AZO powder, in which Al2O3 was more easily and more uniformly doped in ZnO compared to the traditional mechanical grinding method. X-ray diffraction results showed that Al atoms have replaced the position of Zn atoms in ZnO lattice without forming the Al2O3 phase. AZO thin films were deposited at a substrate temperature of 200 degrees C by using pulsed laser deposition. The resistivity of the AZO films was 1.7 x 10(-4) Omega cm and the light transmittance in the visible region exceeded 85%. The properties of these films commendably meet the requirements of solar cell devices. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Properties of Zinc Aluminum Oxide Films and Its Ceramic Target Fabrication

Weifang Yang,Zhanhong Liang,Yaqi Hou,Daming Zhuang,Gong Zhang

DOI: https://doi.org/10.13922/j.cnki.cjovst.2008.01.010

2008-01-01

Abstract:Highly compact, low cost zinc aluminum oxide (ZAO) ceramic target was fabricated by a combination of sol-gel and conventional technique. Then, ZAO films were grown by middle frequency magnetron sputtering of the lab-made target. Its microstructures were characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that high quality ZAO films can be grown with the lab-made targets. Satisfactory results were also obtained in the industrial magnetron sputtering thin film test.
Non-fluorinated superhydrophobic and micro/nano hierarchical Al doped ZnO film: the effect of Al doping on morphological and hydrophobic properties

jingfeng wang,yang li,yi kong,jia zhou,jinzhu wu,xiaohong wu,wei qin,zilong jiao,lixiang jiang

DOI: https://doi.org/10.1039/c5ra15952k

IF: 4.036

2015-01-01

RSC Advances

Abstract:This work reports on the systematic comparison of the crystalline structural, morphological and hydrophobic properties of ZnO and Al-doped ZnO (AZO) thin films fabricated by atomic layer deposition and the hydrothermal method. It was revealed that the surface wettability can be largely modified by Al doping in the zinc oxide film growth process. With Al doping, the morphology of the AZO films became more complex and rough. The water contact angle of a flower-like hierarchical ZnO film (123 +/- 4 degrees) was improved by about 40 degrees via Al doping to 160 +/- 4 degrees. We attributed the variation in surface hydrophobicity with Al doping to changes in the bond angle and distance between ZnO-H2O molecule. The computational simulations have been employed to verify the interfacial distinction between two main crystal orientations of AZO. This result suggests that Al doping can be considered a critical factor in changing the surface morphology of AZO as well as the hydrophobic properties. It is believed that the present route holds promise in the design and application of practical superhydrophobic materials.
Research on preparation process for the in situ nanosized Zr(Y)O2 particles dispersion-strengthened tungsten alloy through synthesizing doped hexagonal (NH4)0.33·WO3

Fangnao Xiao,Thierry Barriere,Gang Cheng,Qiang Miao,Shizhong Wei,Shiwei Zuo,Zhimin Huang,Liujie Xu

DOI: https://doi.org/10.1016/j.jallcom.2020.156059

IF: 6.2

2020-11-01

Journal of Alloys and Compounds

Abstract:In this article, the in situ nanosized Zr(Y)O2 particles uniformly distributed in the tungsten alloy was successfully prepared through synthesizing doped α-HATB powder and spark plasma sintering process. The processing route involves a molecular-level liquid–liquid doping technique that causes a large number of nanosized particles within tungsten grains. The synthesis mechanism of α-HATB and phase evolution were detailedly investigated. Over 75% of W–Zr(Y)O2 powders particles are less than 3 μm. The determined Sw values (5.7), coefficient of uniformity Cu (2.3) of the W-0.5% Zr(Y)O2 doped tungsten are 5.7 and 2.3, respectively, both indicating the narrower size distribution. The average size of Zr(Y)O2 particles in prepared W alloy are about 250 nm under SEM observation. Through milling of these powders, the particles in W-0.5%Zr(Y)O2 alloy and 92.25W-4.9Ni-2.1Fe-0.75ZrO2 can further decrease to less than 100 nm in size, which are 8–10 times smaller than those in the state-of-the-art review.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering

Preparing superdense ZAO target by doping Al2O3 nanopowder

Effects of Al2O3 doping on the microstructural evolution and densification process of AZO targets

In-Situ Doping Preparation of Al-Doped Zno Films Via Pulsed Laser Co-Ablation of Zn and Al Targets with Assistance of Oxygen Plasma

Two-Step Sintering of Aluminum-Doped Zinc Oxide Sputtering Target by Using A Submicrometer Zinc Oxide Powder

Oxygen Interstitial Mediated Effective Doping of Al in ZnO:Al Films Prepared by Magnetron Sputtering

Fabrication and properties of ZAO powder, sputtering target materials and the related films

Directed oxidation growth of Al-Si-Zn alloy

In situ doping of ZnO nanowires using aerosol-assisted chemical vapour deposition

Investigation on the Preparation and Properties of Monodispersed Al2O3ZrO2 Nanopowder Via Co-precipitation Method

Preparation and Properties of Aluminum-Doped Zinc Oxide Ultrafine Powders

Preparation of ZAO powder and investigation on its infrared emissivity

Effects of Al doping on the optical and electrical properties of pre-synthesized ZnO powders by solid state method

Study on the preparation and the film-forming properties of Mo-and Al-doped ZnO ceramic targets

Preparation and Characterization of Aluminum Doped ZnO

Synthesis and Properties of Close Packed ZnO:Al Submicro-Rods Deposited by Pulsed Laser Ablation

Study of sintering mechanism and characteristics of ZBO target

Fabrication of nanostructure Al2O3/ZrO2 (Y2O3) eutectic by combustion synthesis melt-casting under ultra-high gravity

High Quality Al‐doped ZnO Thin Films Deposited Using Targets Prepared by Chemical Coprecipitation

Properties of Zinc Aluminum Oxide Films and Its Ceramic Target Fabrication

Non-fluorinated superhydrophobic and micro/nano hierarchical Al doped ZnO film: the effect of Al doping on morphological and hydrophobic properties

Research on preparation process for the in situ nanosized Zr(Y)O2 particles dispersion-strengthened tungsten alloy through synthesizing doped hexagonal (NH4)0.33·WO3