Influence of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films

Zhanhua Wen,Li Wang,Wenqing Fang,Yong Pu,Xiaoping Luo,Changda Zheng,Jiangnan Dai,Fengyi Jiang
DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.03.014
2005-01-01
Abstract:Undoped ZnO single crystal films are deposited on c-plane sapphire substrates by atmosphere metal-organic chemical vapor deposition. Thermal annealing of ZnO thin films is carried out in air from 710 to 860°C, and the effect of annealing on the structural and optical properties of ZnO films is characterized by DCXRD and PL spectra. The results show the full width at half maximum (FWHM) of ZnO (002) ω-rocking curve first decreases with annealing temperature up to 770°C and then keep unchanged as annealing temperature further increasing. While the FWHM of (102) ω-rocking curve decreases with annealing temperature up to 860°C. It is found by the X-ray ω-2θ scan that the new phase ZnO2 occurs at annealing temperature of 770°C. Room-temperature photoluminescence spectra reveal that the band-edge emission becomes weaker and disappears at 860°C; Meanwhile, the deep-level emission gets stronger with the annealing temperature increasing. The ZnO2 phase and green band vanish in the ω-2θ curve and the PL spectra respectively, as the surface layer of annealed ZnO is etched by ICP, which indicates ZnO2 phase and the defects related to the green band emission only exist in the surface layer of ZnO films.
What problem does this paper attempt to address?