Diode-pumped Vertical External Cavity Surface Emitting Laser at 1Μm

Xiaoping Guo,Meng Chen,Gang Li,Yanrong Song,Bingyuan Zhang,Zhigang Zhang

2004-01-01

Abstract:We demonstrated a diode-pumped vertical external cavity surface emitting laser with simple plane-concave cavity. When the pump power at a wavelength of 811.6 nm is 1.5 W, the maximum output power is 40.4 mW at the wavelength of 1005.8 nm. Theoptical-optical conversion efficiency is 2.7%.

What problem does this paper attempt to address?

High Power Vertical-External-Cavity Surface-Emitting Laser

Peng Zhang,Yanrong Song,Xinping Zhang,Jinrong Tian,Zhigang Zhang

DOI: https://doi.org/10.3788/col20100804.0401

IF: 2.56

2010-01-01

Chinese Optics Letters

Abstract:A high power optically-pumped vertical-external-cavity surface-emitting laser with a diamond heatspreader is demonstrated.Owing to the good thermal conductivity,diamond can accelerate the dissipation of heat in the active region and increase the output power significantly.The effects of the curvature radius,the transmission of output coupler,the spot size of the pump,and the temperature of the heat sink on the output power are investigated.A maximum output power of 880 mW is obtained under the conditions of 10℃temperature,15-mm curvature radius,3%transmission of the output coupler,and 8500-mW pump power.The slope efficiency and the optical-to-optical conversion efficiency of the laser are about 17%and 15%,respectively.
High Beam Quality 978 Nm Optically Pumped Vertical External Cavity Surface Emitting Semiconductor Laser

Fei Wang,Xiaohua Wang,Zhipeng Wei

DOI: https://doi.org/10.1016/j.ijleo.2013.01.017

IF: 3.1

2013-01-01

Optik

Abstract:A high beam quality 978nm vertical external cavity surface emitting lasers pumped by circular beam spot is presented. The VECSEL wafer contains 13 resonant periodic gains, which consisted of strain quantum-wells compensated symmetrically, and double-band mirror. 740mW 978nm and near-diffraction limit (M2=1.05) circular symmetry laser beam is obtained when pumped power is 3.9W, optical conversion efficiency is 18.97% and slope efficiency is 35.2%.
980Nm High Power Bottom Emitting Vcsels

ZH Jin,YF Sun,YQ Ning,CL Yan,L Qin,Y Liu,GT Tao,LJ Wang,DF Cui,HQ Li,ZY Xu

DOI: https://doi.org/10.3321/j.issn:1001-9014.2005.01.015

2005-01-01

Abstract:The structure design and fabrication process of 980 nm high power vertical-cavity surface-emitting laser diodes (VCSELs) were reported. The threshold current, output power and spectrum characteristics were investigated. An optical output power as high as 1.42W for a 400 mum diameter device was achieved at room temperature. To our knowledge, this is the highest record for a single device up to now. The dependence of the CW emitting wavelength and FWHM of spectrum of a 600mum diameter device on injection current indicated the heating effects in the active region. The output power performance was further characterized by using pulse operation with pulse width from 50 similar to 1000mus.
Vertical-external-cavity Surface-Emitting Lasers Operating at Different Wavelength: Design, Numerical Simulation, and Characteristics

CL Yan,L Qin,XN Shan,GG Lu,CF He,YF Sun,T Li,YQ Ning,LJ Wang,HL Jiang

DOI: https://doi.org/10.1117/12.634162

2005-01-01

Abstract:We describe design, numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm, and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure, drawing on the advantages of both. With periodical gain element structure, optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results, and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.
Single-mode Oscillation of a Diode-Pumped Nd:YAG Microchip Laser at 1835 Nm

Jinglong Lan,Qin Cui,Yi Wang,Bin Xu,Huiying Xu,Zhiping Cai

DOI: https://doi.org/10.1016/j.optmat.2016.09.031

IF: 3.754

2016-01-01

Optical Materials

Abstract:Single-mode oscillation of a diode-pumped conventional Nd:YAG laser at 1835 nm is demonstrated, for the first time to our knowledge, in the form of microchip configuration. The achieved maximum output power reaches 189 mW.with slope efficiency of about 5.5% with respect to absorbed pump power. The laser spectra are measured with linewidth less than 0.08 nm indicating a single longitudinal mode. The output laser beam is also measured to be near diffraction-limited with M-2 factors of about 1.2 and 1.5 in x and y directions. Using a mechanical chopper with 50% duty cycle, the maximum output power is improved to 253 mW with slope efficiency of about 9.7%. (C) 2016 Elsevier B.V. All rights reserved.
1080Nm Optically Pumped Vertical-External-cavity Surface-Emitting Laser

Peng Zhang,Yanrong Song,Xinping Zhang,Zhigang Zhang

DOI: https://doi.org/10.1117/12.754960

2007-01-01

Abstract:The edge emitting PL spectrum of semiconductor gain chip used in vertical external cavity surface emitting lasers was theoretically calculated by using Lorenz linear function when considering of the intraband relaxation and the valence band coupling. A model of laser output which considered of thermal effect was used to simulate our VECSELs' output power. The theoretical results were in good agreement with the experimental results. The factors which influence the output wavelength were discussed too.
Performance of a 967 nm CW diode end-pumped Er:GSGG laser at 2.79 Micrometer

Z. H. Wu,D. L. Sun,S. Z. Wang,J. Q. Luo,X. L. Li,L. Huang,A. L. Hu,Y. Q. Tang,Q. Guo

DOI: https://doi.org/10.1088/1054-660X/23/5/055801

2012-12-21

Abstract:We demonstrated a 967 nm diode end-pumped Er:GSGG laser operated at 2.794 Micrometer with spectrum width 3.6 nm in the continuous wave(CW) mode. The maximum output power of 440 mW is obtained at an incident pumping power of 3.4 W, which corresponds to an optical-to-optical efficiency of 13% and slope efficiency of 13.2%. The results suggest that short cavity and efficient cooling setup for crystal are advantageous to improve laser performance.

Optics
High-Power Narrow-Linewidth Quasi-Cw Diode-Pumped Tem00 1064 Nm Nd:Yag Ring Laser

Yuan Liu,Bao-shan Wang,Shi-yong Xie,Yong Bo,Peng-yuan Wang,Jun-wei Zuo,Yi-ting Xu,Jia-lin Xu,Qin-jun Peng,Da-fu Cui,Zu-yan Xu

DOI: https://doi.org/10.1364/AO.51.000C27

IF: 1.9

2012-01-01

Applied Optics

Abstract:We demonstrated a high average power, narrow-linewidth, quasi-CW diode-pumped Nd:YAG 1064 nm laser with near-diffraction-limited beam quality. A symmetrical three-mirror ring cavity with unidirectional operation elements and an etalon was employed to realize the narrow-linewidth laser output. Two highly efficient laser modules and a 90 degrees quartz rotator for birefringence compensation were used for the high output power. The maximum average output power of 62.5 W with the beam quality factor M-2 of 1.15 was achieved under a pump power of 216 W at a repetition rate of 500 Hz, corresponding to the optical-to-optical conversion efficiency of 28.9%. The linewidth of the laser at the maximum output power was measured to be less than 0.2 GHz. (C) 2012 Optical Society of America
A Diode-Pumped 1617nm Single Longitudinal Mode Er:Yag Laser with Intra-Cavity Etalons

Deng Yun,Yao Bao-Quan,Ju You-Lun,Duan Xiao-Ming,Dai Tong-Yu,Wang Yue-Zhu

DOI: https://doi.org/10.1088/0256-307x/31/7/074202

2014-01-01

Chinese Physics Letters

Abstract:We demonstrate the continuous wave p-polarized single longitudinal mode (SLM) operation of an Er: YAG laser at 1617.6nm pumped by a diode-laser with three inserted Fabry-Perot (FP) etalons at room temperature. The Brewster angle inserted FP is applied to obtain the p-polarized laser. For free running, the maximum output power is 570mW with a pump power of 12.5 W. An incident pump power of 12.5W is used to generate the maximum p-polarized single longitudinal mode output power of 78.5mW, corresponding to a slope efficiency of 1.6% and an optical-to-optical efficiency of 0.61%. The beam quality M-2 is measured to be 1.15 at the highest SLM output power. This stable polarized SLM oscillation is encouraging due to its application for an injection-locked system used as a master laser.
Hybrid Integrated External Cavity Diode Laser with Flexible Feedback at 1-Μm Band

Chen,Fang Wei,Xiuyou Han,Qingshuai Su,Haoyang Pi,Yanguang Sun,Huimin Wu,Anton Stroganov,Qing Ye,Haiwen Cai

DOI: https://doi.org/10.1109/piers62282.2024.10618780

2024-01-01

Abstract:We have developed an advanced hybrid integrated external cavity diode laser (ECDL) with flexible feedback that operates in the 1-μm spectral region. The ECDL utilizes a III-V gain chip and a Si 3 N 4 external cavity chip. Within the Si 3 N 4 external cavity chip, in addition to the spot size converter, phase shifter and cascaded dual micro-ring resonant cavity, we also designed an adjustable mirror composed of symmetric Mach-Zehnder interferometer (MZI) and Sagnac loop. By changing the power in the micro-heater on the one arm of the MZI, the feedback ratio of the external cavity can be flexibly adjusted. We investigated the output power of the ECDL at different feedback ratio. The output power can achieve its maximum value when the reflectivity is 28% The tuning range of the ECDL is 40 nm and the SMSR higher than 58 dB.
980Nm Bottom-Emitting Vcsel with an Output Power of 1.95W

YF Sun,YQ Ning,ZH Jin,L Qin,CL Yan,C Wang,Y Liu,GT Tao,GQ Chu,J Liu,LJ Wang

DOI: https://doi.org/10.1117/12.573195

2005-01-01

Abstract:The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) with a wavelength of 980nm are described. The device has been fabricated by using oxidation confinement technology. Al2O3 film, instead of SiO2 film is used as the passivation layer to enhance heat dissipation. A distinguished device performance is achieved. The maximum continuous-wave (CW) output power of large aperture devices with active diameters up to 500 mu m is as high as 1.95W at room temperature, which is to our knowledge the highest value reported for a single device. Size dependence of the output power, the threshold current and the differential resistance is discussed.
Laser Diode End-pumped 1052nm CW Nd:YAG Laser

WANG Yu-shu,XU Hui-ying,CAI Zhi-ping,HUANG Jian-ping,LIU Sun-li,LUO Zhen-qian,LIN Guo-ping

DOI: https://doi.org/10.3969/j.issn.1001-5078.2006.05.005

2006-01-01

Abstract:In this paper we have demonstrated a compact and simple design for LD end-pumped CW laser at 1052nm with Nd∶YAG crystal in the flat-curved cavity.The maximum output power of laser is 3.5W at 1052nm when the absorbed pumping power is 18W,and the optical-to-optical conversion efficiency is 20%.The threshold of the laser is about(0.3W.) The stability of output power is 3% within 2 hours.
Laser Diode-Pumped Dual-Cavity High-Power Fiber Laser Emitting at 1150 Nm Employing Hybrid Gain.

Yizhu Chen,Hu Xiao,Jiangming Xu,Jinyong Leng,Pu Zhou

DOI: https://doi.org/10.1364/ao.55.003824

IF: 1.9

2016-01-01

Applied Optics

Abstract:We demonstrate a laser diode-pumped dual-cavity high-power fiber laser emitting at 1150 nm. The laser employs Yb and Raman gains simultaneously. The fiber laser with a simple structure achieves high-efficiency operation while efficiently suppressing the amplified spontaneous emission and parasitic oscillation. The maximum output power at 1150 nm is 110.8 W, with an optical-to-optical efficiency of 57%. Further power scaling at 1150 nm is expected with the optimization of the system design.
Theoretical Analysis of 980 Nm High Power Vertical External Cavity Surface Emitting Semiconductor Laser (VECSEL)

GG Lu,CF He,XN Shan,T Li,YF Sun,L Qin,CL Yan,YQ Ning,LJ Wang

DOI: https://doi.org/10.1117/12.635713

2006-01-01

Abstract:By using bottom-emitting structure, we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well, single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron, heavy and light holes. According to the transition selection rule, we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells, we calculated the gain of VECSEL using transition matrix elements of electron, heavy and light holes. We give out the threshold gain, output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror, active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.
1.86 W cw single-frequency 1319 nm ring laser pumped at 885 nm

Menglong Li,Weifang Zhao,Siriguleng Zhang,Lin Guo,Wei Hou,Jinmin Li,Xuechun Lin

DOI: https://doi.org/10.1364/AO.51.001241

IF: 1.9

2012-01-01

Applied Optics

Abstract:A 1.86 W cw single-frequency 1319 nm laser was produced by using an 885 nm-pumped Nd:YAG crystal with a compact four-mirror ring cavity, for the first time to our knowledge. The Nd: YAG produced a slope efficiency of 21% and an optical-to-optical efficiency of 18% with respect to the absorbed diode pump power. A near-diffraction-limited beam with M-2 = 1.2 was achieved under the maximum output power. (C) 2012 Optical Society of America
Theoretical Analysis Of 980nm High Power Vertical External-Cavity Surface-Emitting Semiconductor Laser (Vecsel) - Art. No. 60280x

He Chun-feng,Lu Guo-guanga,Shan Xiao-nana,Sun Yan-fang,Te Li,Li Qin,Yan Chang-ling,Ning Yong-qiang,Wang Li-jun

DOI: https://doi.org/10.1117/12.667161

2005-01-01

Abstract:yBy using bottom-emitting structure, we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well, single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron, heavy and light holes. According to the transition selection rule, we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes.By analyzing the gain of strained quantum wells, we calculated the gain of VECSEL using transition matrix elements of electron, heavy and light holes. We give out the threshold gain, output power and other characteristic parameters.We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror, active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.
4350W quasi-continuous-wave operation of a diode face-pumped ceramic Nd:YAG slab laser

junchi chen,jiang li,jialin xu,wenbin liu,yong bo,xiqi feng,yiting xu,dongliang jiang,zhongzheng chen,yubai pan,yading guo,biao yan,chang guo,lei yuan,hongtao yuan,yanyong lin,yunsheng xiao,qinjun peng,wenqiang lei,dafu cui,zuyan xu

DOI: https://doi.org/10.1016/j.optlastec.2014.03.005

IF: 4.939

2014-01-01

Optics & Laser Technology

Abstract:A high efficiency and high power laser diode (LD) face-pumped quasi-continuous-wave (QCW) ceramic Nd:YAG zigzag slab laser is demonstrated. The shape of the LD pump beam is optimized to ensure that the pump size is well matched with the ceramic slab and to improve the uniformity of the intensity distribution along the length and width direction of the ceramic slab. Meanwhile, an efficient cooling technique is adopted to obtain the uniform temperature distribution inside the ceramic slab. Under the LD pump power of 9.98kW, a maximum average output power of 4.35kW at 1064nm is demonstrated at a pulse repetition frequency of 400Hz, corresponding to an optical to optical conversion efficiency of 43.6%. To the best of our knowledge, this is the highest output power as well as the highest conversion efficiency reported for face-pumped QCW ceramic Nd:YAG single slab laser.
High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD

Zhicheng Zhang,Yao Xiao,Jun Wang,Pei Miao,Heng Liu,Yang Cheng,Yudan Gou,Sha Wang,Guoliang Deng,Shouhuan Zhou

DOI: https://doi.org/10.1016/j.jlumin.2023.120022

IF: 3.6

2023-06-30

Journal of Luminescence

Abstract:Here, we demonstrate an InGaAs/GaAs quantum-wells (QWs) based vertical-external cavity surface emitting laser (VECSEL) with multi-watt emitting beyond 1200 nm. The development is motivated by the need for high-performance 1200 nm laser sources, which are located in the C–H bond photoacoustic tomography window and atmospheric transmission band. In the exploration, strain compensation, epitaxy growth, and package strategy are all optimized for effective performance improvement. Highly strained InGaAs/GaAs QWs epitaxy structures are grown on GaAs substrate with high crystalline quality by metal-organic chemical vapor deposition (MOCVD) technology. With effective thermal management, the thermal impedance of the chip is as low as about 0.92 K/W. As a result, the 1200 nm VECSEL can emit a power of 9.4 W under continuous wave (CW) operation, and the threshold pump power density is as low as about 1.61 kW/cm 2 . The VECSEL can also operate at a quasi-continuous wave (QCW) emission with tunable pulse width and repetition rates. Under a duty cycle of ∼9.5%, the VCSEL is with a peak power of 16.6 W and a slope efficiency of about 15.5%, and the corresponding pulse energy is as high as about 1.57 mJ. No thermal rollover is observed. This exploration significantly broadens the VECSEL performance and can be regarded as an extension and enrichment of the earlier works on this topic.

optics
850nm Vertical Cavity Surface Emitting Laser Fabricated by Large Inclined Angle Ion Implantation Using Tungsten as Mask and Its Modulation Character

王海嵩,杜国同,许成栋,宋俊峰,唐君,陈弘达,刘宇,祝宁华

DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.09.019

2004-01-01

Abstract:By optimizing the technology parameters, 850 nm vertical cavity surface emitting laser is fabricated by large inclined angle implantation using tungsten as mask, which is continuous operating at room temperature. The threshold current is lowest to 1.25 mA. The light output power is about 0.92 mW. The modulation performance of the device in TO package indicated that the -3 dB bandwidth is 4.0 GHz, which can be applied in middle and high-speed optical communication.
High Efficient Single-Frequency Output at 1991 Nm from A Diode-Pumped Tm:Yap Coupled Cavity

Jing Li,SuHui Yang,ChangMing Zhao,HaiYang Zhang,Wen Xie

DOI: https://doi.org/10.1364/oe.18.012161

IF: 3.8

2010-01-01

Optics Express

Abstract:A coupled resonator was developed for high efficient room-temperature single-frequency laser operating near 2 mum optical spectral region. 721 mW stable single-longitudinal-mode oscillation at 1991 nm was obtained when the absorbed pumping power was 2.4 W. The optical-to-optical efficiency was 30%, and the slope efficiency was 46%. 5 nm of frequency tuning range was obtained with stable output power. The beam propagation factors M2 were 1.43 and 1.42 in x and y directions, respectively.

Diode-pumped Vertical External Cavity Surface Emitting Laser at 1Μm

High Power Vertical-External-Cavity Surface-Emitting Laser

High Beam Quality 978 Nm Optically Pumped Vertical External Cavity Surface Emitting Semiconductor Laser

980Nm High Power Bottom Emitting Vcsels

Vertical-external-cavity Surface-Emitting Lasers Operating at Different Wavelength: Design, Numerical Simulation, and Characteristics

Single-mode Oscillation of a Diode-Pumped Nd:YAG Microchip Laser at 1835 Nm

1080Nm Optically Pumped Vertical-External-cavity Surface-Emitting Laser

Performance of a 967 nm CW diode end-pumped Er:GSGG laser at 2.79 Micrometer

High-Power Narrow-Linewidth Quasi-Cw Diode-Pumped Tem00 1064 Nm Nd:Yag Ring Laser

A Diode-Pumped 1617nm Single Longitudinal Mode Er:Yag Laser with Intra-Cavity Etalons

Hybrid Integrated External Cavity Diode Laser with Flexible Feedback at 1-Μm Band

980Nm Bottom-Emitting Vcsel with an Output Power of 1.95W

Laser Diode End-pumped 1052nm CW Nd:YAG Laser

Laser Diode-Pumped Dual-Cavity High-Power Fiber Laser Emitting at 1150 Nm Employing Hybrid Gain.

Theoretical Analysis of 980 Nm High Power Vertical External Cavity Surface Emitting Semiconductor Laser (VECSEL)

1.86 W cw single-frequency 1319 nm ring laser pumped at 885 nm

Theoretical Analysis Of 980nm High Power Vertical External-Cavity Surface-Emitting Semiconductor Laser (Vecsel) - Art. No. 60280x

4350W quasi-continuous-wave operation of a diode face-pumped ceramic Nd:YAG slab laser

High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD

850nm Vertical Cavity Surface Emitting Laser Fabricated by Large Inclined Angle Ion Implantation Using Tungsten as Mask and Its Modulation Character

High Efficient Single-Frequency Output at 1991 Nm from A Diode-Pumped Tm:Yap Coupled Cavity