Lateral Cavity Surface Emitting Laser Based on High Contrast Grating

Wan-hua Zheng,Aiyi Qi,Yufei Wang,Hongwei Qu,Lei Liu,Chuanlong Ma,Yejin Zhang

DOI: https://doi.org/10.1364/acpc.2013.af1b.3

2013-01-01

Abstract:We present a single mode lateral cavity surface emitting laser based on high contrast grating. Electrically driven high output power of 3.94 mW and divergence angle of 7.4° lasing action are obtained at room temperature.

What problem does this paper attempt to address?

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

G Witjaksono,S Li,JJ Lee,D Botez,WK Chan

DOI: https://doi.org/10.1063/1.1636248

IF: 4

2003-01-01

Applied Physics Letters

Abstract:Half-wave phase shifts were fabricated in the center of second-order GaAs gratings, for use in surface-emitting, horizontal-cavity, semiconductor diode lasers (λ=0.98 μm). Incorporating such gratings in diode lasers with distributed-feedback (DFB) active regions and distributed Bragg reflectors (DBRs) is found to provide surface-normal, single-lobe beam emission, as predicted by theory. InGaAs/AlGaAs/InGaP, two-quantum-well structures are employed. A 500-μm-long GaAs/Au second-order grating with half-wave phase shift represents the DFB region, which provides feedback and unidirectional light outcoupling. GaAs/SiO2/Au, 500-μm-long, second-order gratings are the DBR regions, on either side of the DFB region, which provide both frequency-selective feedback as well as unidirectional outcoupling. Lateral-mode control is achieved via a 2.5-μm-wide ridge waveguide. Surface emission is obtained through a 80-μm-wide window stripe in the metallization on the substrate n-side. Single-frequency lasing in an orthonormally emitted, single-lobe, diffraction-limited beam is obtained to 3× threshold under pulsed-drive conditions (200 ns wide pulses, 1 kHz repetition rate).
High power external cavity semiconductor laser

Qiming Dong,Zhongqi Pan,Hanyi Zhang,Jinqiang Yang,Bingkun Zhou

1998-01-01

Abstract:The high power external cavity semiconductor laser has become an important optoelectronic device. Using a grating as the feedback component, a laser of single frequency output over 70 mW and side mode suppression over 30 dB is realized. The parameters which influence the performance of the high power external cavity laser are analyzed.
Diode-pumped Vertical External Cavity Surface Emitting Laser at 1Μm

Xiaoping Guo,Meng Chen,Gang Li,Yanrong Song,Bingyuan Zhang,Zhigang Zhang

2004-01-01

Abstract:We demonstrated a diode-pumped vertical external cavity surface emitting laser with simple plane-concave cavity. When the pump power at a wavelength of 811.6 nm is 1.5 W, the maximum output power is 40.4 mW at the wavelength of 1005.8 nm. Theoptical-optical conversion efficiency is 2.7%.
Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Wai Yuen Fu,Zhongqi Wang,Yuk Fai Cheung,Hoi Wai Choi

DOI: https://doi.org/10.1364/OL.534465

2024-08-15

Abstract:Vertical-cavity surface-emitting lasers (VCSELs) are pivotal in various applications ranging from data communication to sensing technologies. This study introduces a VCSEL design featuring a monolithic top surface high contrast grating (HCG) reflector on a thin-film substrate, aimed at improving lasing performance while reducing fabrication costs by omitting the use of distributed Bragg reflectors (DBRs). We fabricated the proposed VCSEL with the surface grating and characterized its performance through micro-photoluminescence measurements. The laser demonstrated room-temperature lasing at 436.2 nm with a Q factor of 4600 and a lasing threshold of 5.5 kW/cm2 under optical pumping. The implementation of the surface grating reflector was instrumental in facilitating vertical lasing, significantly improving surface reflectivity compared to conventional flat GaN/air interfaces. This innovative design holds significant promise for the development of cost-effective, DBR-free VCSELs, with potential applications extending to photonic integrated circuits and light detection and ranging (LiDAR) systems.
Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide

Xiaochen Ge,Momchil Minkov,Shanhui Fan,Xiuling Li,Weidong Zhou

DOI: https://doi.org/10.1038/s41699-019-0099-1

IF: 10.516

2019-04-15

npj 2D Materials and Applications

Abstract:With an ultimately thin active region, monolayer transition metal dichalcogenide lasers have the potential of realizing ultralow lasing threshold and power consumption. The flexibility also enables integration possibilities on unconventional substrates. Here, we report a photonic crystal surface emitting laser using monolayer tungsten disulfide as the gain medium. The cavity design utilizes a heterostructure in the photonic crystal lattice to provide lateral confinement for a high quality factor with a compact active region. Room-temperature continuous wave lasing is realized after integrating monolayer tungsten disulfide flakes onto the silicon nitride photonic crystal on a quartz substrate. Highly directional, near surface-normal emission has also been experimentally demonstrated. The work reported here demonstrates that a large-area single-mode directional laser can be realized from a monolayer gain medium, which is critical for laser scaling for on-chip integration in data and sensing applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Submilliampare threshold 1.3 mu m vertical-cavity surface-emitting lasers

Lao Yan-Feng,Cao Chun-Fang,Wu Hui-Zhen,Cao Meng,Gong Qian

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:We present the design and fabrication of 1.3 mu m vertical-cavity surface-emitting lasers (VCSELs). This laser exhibits continuous-wave single-mode operation up to 82 degrees C. The theshold current as low as 0.51 mA and a slop efficiency of 0.29 W/A have been achieved. This laser is composed of a wafer-bonded GaAs/Al (Ga) As distributed Bragg reflector (DBR) and a dielectric SiO2/TiO2 DBR with InAsP/InGaAsP strain-compensated multi-quantum wells grown in the cavity. The effect of cavity mode-gain offset on device performance is then discussed.
Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers

Cheng Liu,Huizhen Wu

DOI: https://doi.org/10.1007/978-981-16-5692-7_20

2021-01-01

Abstract:1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs.
Research Progress of Horizontal Cavity Surface-Emitting Laser

Jishun Liu,Yue Song,Yongyi Chen,Li Qin,Lei Liang,Shen Niu,Ye Wang,Peng Jia,Cheng Qiu,Yuxin Lei,Yubing Wang,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.3390/s23115021

2023-05-24

Abstract:The horizontal cavity surface emitting laser (HCSEL) boasts excellent properties, including high power, high beam quality, and ease of packaging and integration. It fundamentally resolves the problem of the large divergence angle in traditional edge-emitting semiconductor lasers, making it a feasible scheme for realizing high-power, small-divergence-angle, and high-beam-quality semiconductor lasers. Here, we introduce the technical scheme and review the development status of HCSELs. Firstly, we thoroughly analyze the structure, working principles, and performance characteristics of HCSELs according to different structures, such as the structural characteristics and key technologies. Additionally, we describe their optical properties. Finally, we analyze and discuss potential development prospects and challenges for HCSELs.
Highly-efficient, diffraction-limited laser emission from a Vertical External Cavity Surface-emitting Organic Laser

Hadi Rabbani-Haghighi,Sebastien Forget,Sebastien Chenais,Alain Siove

DOI: https://doi.org/10.1364/OL.35.001968

2010-06-06

Abstract:We report on a solid-state laser structure being the organic counterpart of the Vertical External-Cavity Surface-Emitting Laser (VECSEL) design. The gain medium is a poly (methyl methacrylate) film doped with Rhodamine 640, spin-casted onto the High-Reflectivity mirror of a plano-concave resonator. Upon pumping by 7-ns pulses at 532 nm, a diffraction-limited beam (M^2=1) was obtained, with a conversion efficiency of 43%; higher peak powers (2kW) could be attained when resorting to shorter (0.5 ns) pump pulses. The spectrum was controlled by the thickness of the active layer playing the role of an intracavity etalon; tunability is demonstrated over up to 20 nm.

Optics
Two-dimensional heterostructure quasi-BIC photonic crystal surface-emitting laser with low divergence

Renjie Tang,Yilin Shi,Hongpeng Shang,Jianghong Wu,Hui Ma,Maoliang Wei,Ye Luo,Zequn Chen,Yuting Ye,Jialing Jian,Xiaorui Zheng,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1515/nanoph-2023-0156

IF: 7.5

2023-06-21

Nanophotonics

Abstract:High beam quality, large-area output, and small footprint are significant pursuing goals for vertical-cavity surface-emitting lasers (VCSELs), which impose strict requirements on tight light confinements with minimized radiation losses. To achieve this, bound states in the continuum (BICs) have been demonstrated as an effective way of trapping light. Here, we combine BICs and photonic bandgaps to realize a quasi-BIC single-mode photonic crystal (PhC) laser on a colloidal quantum dots (CQDs)/silicon oxide (SiO 2 ) hybrid integrated platform. The PhC cavity is a defect-free hexagonal heterostructure with three regions, and the thin CQDs film is embedded within the SiO 2 nanopillar planar array as both an optical gain material and a backbone for the PhC. The mode gaps between different regions provide the lateral confinement while the quasi-BICs near the Γ-point generate the small-divergence vertical radiation coupling, resulting in a well-defined emission concentrating within ±1.85° of the normal surface direction and an optical pumping energy density threshold of 216.75 μJ/cm 2 . Our results demonstrate the design flexibility and versatility of the quasi-BIC laser even with a low contrast of a refractive index between the PhC slab and the substrate, which has potential applications in cavity quantum electrodynamics, nonlinear optics, and integrated photonics.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Chunkao Ruan,Yongyi Chen,Feng Gao,Li Qin,Dezheng Ma,Peng Jia,Chao Chen,Hao Wu,Xia Liu,Yugang Zeng,Xing Zhang,Yue Song,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1016/j.optcom.2020.126377

IF: 2.4

2021-01-01

Optics Communications

Abstract:Single-longitudinal-mode gain-coupled distributed feedback (DFB) lasers based on high-order gain-coupled surface gratings emitting at 770 nm window are implemented. The periodic surface metal p-contact with insulated grating grooves realizes a gain coupled mechanism. Our devices provided a single longitudinal mode with the maximum CW output power up to 116.8 mW@400 mA with facet coated (HR 99%, AR<0.5%), 3 dB linewidth is 0.26 pm and SMSR is 36 dB. Due to easy-to-manufacture technology and stable performance, it provides a practical gain-coupled distributed feedback laser emitting at 770 nm region manufacturing method for commercial applications.
High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

Zhengqing Ding,Juntian Cao,Kun Zhan,Yihang Chen,Lidan Zhou,Hao Tan,Chenao Yang,Ying Yu,Zhichuan Niu,Siyuan Yu

2024-07-10

Abstract:Traditional Distributed Feedback (DFB) or Distributed Bragg Reflector (DBR) lasers typically utilize buried gratings as frequency-selective optical feedback mechanisms. However, the fabrication of such gratings often necessitates regrowth processes, which can pose technical challenges for materials platforms such as GaAs and GaSb. Metal gratings were also used for GaSb lasers but they introduce additional absorption loss that limits device efficiency and output power. In this paper, we introduce a novel laterally coupled dielectric Bragg grating structure, which enables highly controllable, deterministic, and stable coupling between the grating and the optical mode. Our device demonstrates a continuous-wave output power of 47.02 mW at room temperature, exhibiting stable single-mode operation from 300-1000 mA and achieving a maximum side mode suppression ratio of 46.7 dB. These results underscore the innovative lateral coupled dielectric grating as a feasible and technologically superior approach for fabricating DFB and DBR lasers, which hold universal applicability across different material platforms and wavelength bands.

Optics,Applied Physics
High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

Yuxin Lei,Yongyi Chen,Feng Gao,Dezheng Ma,Peng Jia,Hao Wu,Chao Chen,Lei Liang,Jun Zhang,Jingyu Tian,Li Qin,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1016/j.optcom.2019.02.073

IF: 2.4

2019-01-01

Optics Communications

Abstract:In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over 1.2 W/facet is achieved at 4 A. High single-longitudinal-mode output power reaches up to 0.9 W/facet at 3 A at each uncoated facet. The side mode suppression ratio is nearly 30 dB at 980 nm. The 3 dB spectral width is less than 2.7 pm. The lateral far field divergence angle is only 14.5 degrees, the beam quality factor M-2 is 1.7, achieving a near-diffraction-limit emission. Our device, produced by standard i-line lithography, enhances the output power while obtaining the pleasurable spectral and spatial properties. It has great potential in widespread commercial applications such as high efficiency pumping sources for its low-cost, easy fabrication technique and excellent performance.
Emission characteristics of surface second-order metal grating distributed feedback semiconductor lasers

JunXiu Shi,Li Qin,Yun Liu,Nan Zhang,Jian Zhang,LiSen Zhang,Peng Jia,YongQiang Ning,YuGang Zeng,JinLong Zhang,LiJun Wang

DOI: https://doi.org/10.1007/s11434-012-5175-2

2012-01-01

Chinese Science Bulletin

Abstract:To obtain high-power semiconductor lasers with stable operation in a single longitudinal mode and improve the characteristics of the output beam, an end-emitting surface second-order metal grating distributed feedback (DFB) laser emitting at around 940 nm is fabricated. The characteristics of the uncoated devices with and without gratings are tested under room temperature continuous-wave conditions without any temperature-control device and compared. The devices with gratings achieve high powers of up to 385 mW/facet and a small lateral far-field angle of 2.7° at 1.5 A, have only 4.13 nm/A wavelength-shift, and 0.09 nm spectral linewidth at 600 mA, and operate in a stable longitudinal mode. Devices without gratings operate in multimode, with a larger lateral far-field angle (7.3°) and spectral linewidth (1.3 nm), although with higher output powers. Because of the integration of second-order metal gratings and their very high coupling capability, the output beam quality is improved greatly, the lasing wavelength is stable and varies slowly with changes in injection current, while the spectrum is narrowed dramatically, and the far-field angles are greatly reduced. This opens the way for the realization of watt-scale power broad-stripe (>100 μm) surface second-order metal grating end and surface-emitting DFB lasers and arrays with single frequency, single mode operation and high output beam quality.
High Power Vertical-External-Cavity Surface-Emitting Laser

Peng Zhang,Yanrong Song,Xinping Zhang,Jinrong Tian,Zhigang Zhang

DOI: https://doi.org/10.3788/col20100804.0401

IF: 2.56

2010-01-01

Chinese Optics Letters

Abstract:A high power optically-pumped vertical-external-cavity surface-emitting laser with a diamond heatspreader is demonstrated.Owing to the good thermal conductivity,diamond can accelerate the dissipation of heat in the active region and increase the output power significantly.The effects of the curvature radius,the transmission of output coupler,the spot size of the pump,and the temperature of the heat sink on the output power are investigated.A maximum output power of 880 mW is obtained under the conditions of 10℃temperature,15-mm curvature radius,3%transmission of the output coupler,and 8500-mW pump power.The slope efficiency and the optical-to-optical conversion efficiency of the laser are about 17%and 15%,respectively.
Laterally confined photonic crystal surface emitting laser based on monolayer tungsten disulfide operating at room temperature

Xiaochen Ge,Momchil Minkov,Shanhui Fan,Xiuling Li,Weidong Zhou

DOI: https://doi.org/10.48550/arXiv.1806.08019

2018-06-21

Optics

Abstract:We report a photonic crystal surface emitting laser using monolayer tungsten disulfide as the gain medium. The cavity design utilizes a heterostructure in the photonic crystal lattice to provide lateral confinement for a high quality factor with a compact active region. Room temperature continuous wave lasing is realized after integrating monolayer tungsten disulfide flakes onto the silicon nitride photonic crystal on quartz substrate. Highly directional, near surface normal emission has also been experimentally demonstrated.
509 nm high power wide-tuned external cavity surface emitting laser

Tao Wang,Xue-Fang Peng,Liang He,Xiao-Yu Shen,Ren-Jiang Zhu,Li-Dan Jiang,Cun-Zhu Tong,Yan-Rong Song,Peng Zhang,College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences,Changchun 130033, China,Faculty of Sciences, Beijing University of Technology, Beijing 100124, China,National Center for Applied Mathematics in Chongqing, Chongqing Normal University, Chongqing 401331, China

DOI: https://doi.org/10.7498/aps.73.20240499

IF: 0.906

2024-06-20

Acta Physica Sinica

Abstract:Author(s): Wang Tao, Peng Xue-Fang, He Liang, Shen Xiao-Yu, Zhu Ren-Jiang, Jiang Li-Dan, Tong Cun-Zhu, Song Yan-Rong, Zhang Peng High power widely tunable green lasers have potential applications in many fields such as biomedicine, lidar, laser spectroscopy, laser display, underwater wireless optical communication, and fine processing of nonferrous metals. Vertical-external-cavity surface-emitting lasers, also known as semiconductor disk lasers, have the advantages of high power, good beam quality, and wide bandwidth of gain medium. In this work, a gain chip with a reverse-growth epitaxy structure and an emitting wavelength of 1018 nm is designed. In the DBR reflection spectrum, a bandwidth of 74 nm is achieved above a reflectivity of greater than 99.1%, laying a solid foundation for achieving high-power widely tunable output. The laser cavity combines a 1018 nm semiconductor gain chip, a folded mirror, and a plane mirror to construct a compact V-type resonant cavity. A class-I phase-matched LBO nonlinear crystal with a length of 10 mm is placed at the beam waist of the cavity to realize an efficient frequency doubling process to produce a 509 nm green laser. To meet the requirement for the polarization during frequency conversion and to tune the oscillating wavelength of the laser, a birefringent filter (BRF) is employed in the laser resonant cavity. When the thickness of the used BRF is 1 mm, the obtained wavelength tuning range of the fundamental laser and the frequency doubled green laser are 47.1 nm and 20.1 nm, respectively, showing a good tuning capability of the laser. The laser's performance varies with the thickness of the BRF. When using a 2 mm BRF, a maximum power output of the frequency-doubled green laser reaches 8.23 W during continuous tuning, indicating an ideal compatibility of wide tuning characteristics with a high power output. Meanwhile, its beam quality <i<m< 1.00="" 1.03="" 16.6%.="" 68.2%,="" <i<x<="" <i<y<="" <sup<2<="" a="" absorbed="" also="" and="" are="" beam="" brf,="" brfs="" can="" consistent="" converse="" conversion="" demonstrating="" different="" diffraction-limited="" doubled="" doubling="" efficiency="" efficiently="" excellent="" factors="" found="" frequency="" frequency-doubled="" from="" fundamental="" green="" i<="" i<-="" i<-direction,="" in="" into="" is="" is,="" it="" laser="" laser.="" lasers="" light="" line="" linewidths="" meanwhile,="" narrower="" near="" of="" optical-to-optical="" p="" possesses="" pump="" quality.="" reaches="" respectively,="" result.<="" spectral="" sup Acta Physica Sinica. 2024 73(12): 124204. Published 2024-06-20</i<m<>

physics, multidisciplinary
Vertical Microcavity Surface-Emitting Ring Laser

J LIN,JK GAMELIN,GT DU,S WANG,M HONG,JP MANNAERTS

DOI: https://doi.org/10.1063/1.106844

IF: 4

1992-01-01

Applied Physics Letters

Abstract:We report the performance of a novel surface-emitting laser of ring structure (RSEL). The far-field emission pattern of the RSEL remains a near-diffraction limited single lobe at 3 times the threshold current level. The structure may also be used to achieve beam width much less than that of the diffraction limit of Gaussian near-field distribution.
Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

Gyeong Cheol Park,Weiqi Xue,Alireza Taghizadeh,Elizaveta Semenova,Kresten Yvind,Jesper Mørk,Il-Sug Chung

DOI: https://doi.org/10.48550/arXiv.1411.2483

2014-11-11

Abstract:We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

Optics
Practical Multisegment Composite-Cavity Semiconductor Lasers

Hanyi Zhang,Yanjie Chai,He Huang,Haifeng Li,Bingkun Zhou

DOI: https://doi.org/10.1364/oam.1989.wl24

1989-01-01

Abstract:To provide good light sources of narrow linewidth for coherent optical communication systems we have proposed a new type of external cavity semiconductor laser with multisegment cavity structure.1 Its advantages are: (1) stable single longitudinal mode operation with high side-mode suppression ratio is easily obtained; (2) two-branch output beams standing in direction can be used. In this paper we report a practical device with multisegment cavity configuration, which basically consists of a 1.5-μm antireflection coated laser diode (LD) coupled by a graded-index (GRIN) lens to a thin Fabry-Perot etalon. The etalon is fixed on a piezoelectric transducer (PZT) and its angle of inclination can be adjusted by three fine screws for laser wavelength tuning and for optimization of alignment. The facet reflectivities of the LD, GRIN lens, and F.P. etalon are matched for achieving good single longitudinal mode oscillation. Analyses and experiments indicate that the frequency instability originates mainly from the fluctuation of the environmental temperature and mechanical disturbances in external cavity lasers.2 To reduce these effects all components are stuck on a microcrystal glass plate with low expansion coefficient and their interthermal expansions are compensated, i.e., 2αi,Li ≈ 0, where αi, and Li, are the thermal expansion coefficient and lengths of each component, respectively. The LD temperature is controlled within 0.1°C using a small Peltier cooler. All the components are put in a copper box. The device size is 32 × 26 × 65 mm3 and the actual cavity length is 2-4 cm.

Lateral Cavity Surface Emitting Laser Based on High Contrast Grating

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

High power external cavity semiconductor laser

Diode-pumped Vertical External Cavity Surface Emitting Laser at 1Μm

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide

Submilliampare threshold 1.3 mu m vertical-cavity surface-emitting lasers

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers

Research Progress of Horizontal Cavity Surface-Emitting Laser

Highly-efficient, diffraction-limited laser emission from a Vertical External Cavity Surface-emitting Organic Laser

Two-dimensional heterostructure quasi-BIC photonic crystal surface-emitting laser with low divergence

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

Emission characteristics of surface second-order metal grating distributed feedback semiconductor lasers

High Power Vertical-External-Cavity Surface-Emitting Laser

Laterally confined photonic crystal surface emitting laser based on monolayer tungsten disulfide operating at room temperature

509 nm high power wide-tuned external cavity surface emitting laser

Vertical Microcavity Surface-Emitting Ring Laser

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

Practical Multisegment Composite-Cavity Semiconductor Lasers