Abstract:Single crystals of Hg0.89Mn0.11Te have been successfully grown by vertical Bridgman method at the optimized growth conditions. The X-ray rocking curve shows that the as-grown Hg1−xMnxTe possesses high perfection. Hall measurement data suggest that the electronic properties of as-grown wafers satisfy the requirement of detector manufacture. The resistivity and magnetization of the crystal were also measured by the superconducting quantum interference device (SQUID) magnetometer in the temperature ranges 5–80 and 5–300 K, respectively. The applied magnetic fields were 8.0×105, 1.6×106, 3.2×106, and 5.2×106 A m−1 for the resistivity measurements, and 8.0×103 A m−1 for magnetization measurement. The results of reciprocal susceptibility versus temperature fit Curie–Weiss law very well at the temperatures above 40 K, but deviate from the law in the range 5–40 K, which shows that the crystal possesses paramagnetic properties in the temperature range, and the paramagnetism of the crystal enhances in the lower temperature range below 40 K. The resistivity decreases with an increase of applied magnetic field in the extrinsic conduction region (T>20 K) due to the decrease of the ionization energy ε1. In the hopping conduction region (T<20 K), the increased spatial extent of the acceptor wave function under magnetic field leads to impurity conduction, therefore, the difference of resistivity under different magnetic fields increases rapidly with decreasing temperature, and the difference of that under zero magnetic field and 5.2×106 A m−1 is more than 3 orders of magnitude at 5 K.

Vertical Bridgman Growth of Hg1-Xmnxte with Variational Withdrawal Rate

Thermosolutal Convection and Solute Segregation of Hg1−xCdxTe Alloy During the Vertical Bridgman Single Crystal Growth

Characterization of Hgmnte Crystals Grown by Vertical Bridgman Method

Numerical analysis on Hg1−xCdxTe growth by ACRT-VBM

A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

A modified vertical Bridgman method for growth of high-quality Cd<sub>1−x</sub>Zn<sub>x</sub>Te crystals

Vertical Gradient Freezing Growth of HgCdTe

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

Growth and Properties of 40mm Diameter Hg1−xCdxTe Using the Two- Stage Pressurised Bridgman Method

Correlation Between the X Value and Qualities of Cd1−xZnxTe Crystal Grown by Vertical Bridgman Method

Growth of Cd1−xZnxTe Crystals with Different X Values and Their Qualities Comparison

CHARACTERIZATION AND ANALYSES OF THE CRYSTALLIZATION QUALITY AND PROPERTIES OF ACRT-VBM Hg1-xMnxTe CRYSTALS

Thermodynamic Analysis of the Growth of Hg1−xCdxTe by MOCVD

A Two-Stage Technique for Single Crystal Growth of HgCdTe Using a Pressurized Bridgman Method

Improvement of the Thz Response of Zn1-Xmnxte Bulk Crystals Grown by A Temperature Gradient Solution Method

Effects of Growth Speed on Shape of Solid-Liquid Interface During Modified-Bridgman Growth of HgCdTe

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Impurities in CdZnTe crystal grown by vertical Bridgman method

Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

Growth Of Different Crystals Using A Modified Bridgman System