Abstract:Strongly correlated electron materials harbor interesting materials physics, such as high-Tc superconductivity, colossal magnetoresistance, and metal-insulator transition. These physical properties can be greatly influenced by the dimensionality and geometry of the hosting materials and their interaction strengths with underlying substrates. In a classic strongly correlated oxide vanadium sesquioxide (V2O3), the coexistence of a metal-insulator and paramagnetic-antiferromagnetic transitions at ∼150 K makes this material an excellent platform for exploring basic physics and developing future devices. So far, most studies have been focused on epitaxial thin films in which the strongly coupled substrate has a pronounced effect on V2O3, leading to the observations of intriguing phenomena and physics. In this work, we unveil the kinetics of a metal-insulator transition of V2O3 single-crystal sheets at nano and micro scales. We show the presence of triangle-like alternating metal/insulator phase patterns during phase transition, which is drastically different from the epitaxial film. The observation of single-stage metal-insulator transition in V2O3/graphene compared to the multistage in V2O3/SiO2 evidence the importance of sheet-substrate coupling. Harnessing the freestanding form of the V2O3 sheet, we show that the phase transition of V2O3 sheet can generate a large dynamic strain to monolayer MoS2 and tune its optical property based on the MoS2/V2O3 hybrid structure. The demonstration of the capability in tuning phase transition kinetics and phase patterns using designed hybrid structure of varied sheet-substrate coupling strengths suggests an effective knob in the design and operation of emerging Mott devices.

Thickness-Dependent Metal-Insulator Transition In V2o3 Ultrathin Films

Chemical, structural and electronic properties of ultrathin V2O3 films on Al2O3 substrate: Implications in Mott-like transitions

Thickness-dependence of the electronic properties in V2O3 thin films

Thickness-modulated Metal–insulator Transition of VO2 Film Grown on Sapphire Substrate by MBE

Thickness-dependent Metal-to-insulator Transition in Epitaxial VO2 Films

Thickness-modulated Temperature Dependent Optical Properties of VO 2 Thin Films

Fabrication and Characterization of Metal to Insulator Phase Transition Thin Films

Metal-insulator transition induced in SrTi_{1-x}V_xO_3 thin films

Thermal Conductivity and Dynamic Heat Capacity Across the Metal-Insulator Transition in Thin Film VO2

Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition

Unveiling the Mechanisms of Metal-Insulator Transitions in V2O3 : the Role of Trigonal Distortion

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V 2 O 3 Films

Simple Method Preparation for Ultrathin VO2 Thin Film and Control: Nanoparticle Morphology and Optical Transmittance

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Tunable metal-insulator transition in strained thin films epitaxially grown on SiC substrates

Metal-Insulator Transition of Single-Crystal V2O3 Through Van Der Waals Interface Engineering

Effects of Thickness on the Nanocrystalline Structure and Semiconductor-Metal Transition Characteristics of Vanadium Dioxide Thin Films

Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films

Metal-insulator transition in V 2 O 3 with intrinsic defects

Metal-Insulator Transition of Single-Crystal V 2 O 3 through van der Waals Interface Engineering