Abstract:We present a joint experimental and theoretical study on the geometric and electronic states and the initial oxidation of the (2X3)-Sr/Si(100) surface. With scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) measurements combined with ab initio calculations, the atomic geometry and the electronic states of the (2X3)-Sr/Si(100) surface are identified. The dimerization of the Si atoms in the single atom row based on a (1X3) Si substrate model plays a critical role in stabilization of the surface structure and in determining the electronic properties. At the very initial oxidation of the surface, four features corresponding to the primary adsorption and oxidation sites are determined. Three of them are corresponding to the most favored oxidation sites with single oxygen molecules, whose local density of states gives semiconducting behavior. One is corresponding to the oxidation site with two oxygen molecules, whose local density of states gives metallic behavior. These features all exhibit dark spots with different shapes in the occupied state images but display either dark spots or bright protrusions depending on the different oxidation sites in the empty state images. Compared with the theoretical calculations, the plausible adsorption and oxidation models are proposed. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001580]

Study of In/Si Stable Surfaces by Leed

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Surface reconstruction and faceting of group IIIIV(113) systems — common characteristics of the stable surface structures

Major Stable Surface Of Silicon: Si(20423)

Atomic Structure Of The Si(103)1x1-In Surface

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Major stable surface of silicon: Si(20 4 23)

Structure and Stability of Si(114)-(2x1)

Study of Si and Ge growth on Si(100) surface

A LEED, ELS Study of InP(100) Surfaces Prepared by Phosphorus Deposition and Post-Annealing

Surface And Interface Study Of U/Si (111)

Atomic Structure Of The Si(112) 7x1-In Surface

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Si(313) 12 X 1: Another Metallic Stable Surface Of Silicon Having A Complex Reconstructed Layer

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

Structural Stability of the Ge/Si(1 1 3)-2×2 Surface

INTERACTION BETWEEN Li ATOMS ON Si(100)2×1 AND PHASE CHANGE OF SURFACE STRUCTURE

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Identifying atomic geometry and electronic structure of (2×3)-Sr/Si(100) surface and its initial oxidation

A Comparative Study of the Thermal Stability of the (103) Surface of Group-Iii-metal/group-iv-semiconductor Systems