Abstract:We collected in situ high-temperature powder X-ray diffraction (XRD) patterns, as well as Raman and Fourier transform infrared (FTIR) spectra on a natural serandite sample. The volumetric thermal expansion coefficient αV (K−1) is determined as a linear function of T (K): 37.6(5) × 10−9 × T + 11.1(3) × 10−6, with an averaged value of 31.7(10) × 10−6 K−1, while the anisotropy of axial thermal expansivities shows the order of αa > αb > αc. The isobaric Grüneisen parameters γiP are constrained as: 0.2–1.6 for most of the lattice vibrations below 500 cm−1; while 0–0.6 for the O–Si–O bending and Si–O stretching modes inside the Si3O9 chains above 500 cm−1. As compared with common silicate phases in the upper mantle and the transition zone, the γiP parameters for the internal vibrations are significantly smaller in silicate chains (serandite, enstatite) than those in Si2O7 groups (wadsleyite) and isolated SiO4 units (forsterite, pyrope), since the rotation of the bridging O atoms (in the direction perpendicular to Si–O–Si) could relax the SiO4 tetrahedra at elevated temperature. The OH-bending vibration of serandite is observed in both Raman-active (1378 cm−1) and IR-active (1389 cm−1) modes, with a temperature-dependence of − 0.07 and − 0.09 cm−1/K, respectively. The red-shift of these OH-bending modes with increasing temperature indicates that the hydrogen bond gets weaker as the O3…O4 distance becomes larger during thermal expansion. Additionally, our polarized FTIR spectra confirm that the stretching mode of the very strong hydrogen bond, a broad absorption region (1400–3300 cm−1), is polarized in the direction of E//b, as reported by Hammer et al. (Am Mineral 83:569–576, 1998).

Thermal Expansion of Lattice Parameter of (powder) Silicon Up to 1473 K

Linear Thermal Expansion Coefficient of Silicon from 293 to 1000 K

Thermal expansion coefficient of single crystal silicon from 7 K to 293 K

In Situ X-ray Diffraction Study of Silicon at Pressures Up to 15.5 GPa and Temperatures Up to 1073 K

Thermal Expansion of Cubic Si3N4 with the Spinel Structure

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Thermal Expansion of 3C-SiC Obtained from In-Situ X-ray Diffraction at High Temperature and First-Principal Calculations

Thermal Expansion Coefficients of Lafe11.7si1.3

Lattice constant and coefficient of linear thermal expansion of the silicon crystal. Influence of isotopic composition

Compressibility And Thermal Expansion Of Cubic Silicon Nitride

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

X-ray measurement of elastic strain and lattice constant of diffused silicon

High Pressure Structural Behavior of Silicon Telluride (Si2Te3) Nanoplates

Thermal elastic behavior of CaSiO 3-walstromite: A powder X-ray diffraction study up to 900 °c

In Situ High P‐T X Ray Diffraction Studies on Three Polymorphs (α, Β, Γ) of Mg2SiO4

Ab initio study of the volume dependence of dynamical and thermodynamical properties of silicon

Thermal Equation of State of Silicon Carbide

Thermal conductivity of silicon at elevated temperature: Role of four-phonon scattering and electronic heat conduction

Thermal Expansion of Silicon Between 293 K and 873 K Using a Capacitor Dilatometer

Yield Strength of Α‐silicon Nitride at High Pressure and High Temperature

High-temperature X-ray Diffraction, Raman and IR Spectroscopy on Serandite