Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

X-ray measurement of elastic strain and lattice constant of diffused silicon

Measuring Lattice Parameter of Iron Silicides Using X-Ray Bragg-surface Diffraction

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Lattice constant measurement from electron backscatter diffraction patterns

Lattice constant and coefficient of linear thermal expansion of the silicon crystal. Influence of isotopic composition

Finite element analysis of surface-stress effects in the Si lattice-parameter measurement

Measuring Interface Strains At The Atomic Resolution In Depth Using X-Ray Bragg-Surface Diffraction

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Deviation of Silicon Lattice Constant Due to Isotope Abundance

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

The Effect of Impurity-Induced Lattice Strain and Fermi Level Position on Low Temperature Oxygen Diffusion in Silicon

Investigation of Sb diffusion in amorphous silicon

X ray diffraction study of heavily boron doped Si epilayer after rapid thermal annealing

Donor-bound-exciton strain microscopy in silicon devices

Influence of strain on the conduction band structure of strained silicon nanomembranes

X-ray phase contrast topography to measure the surface stress and bulk strain in a silicon crystal