Abstract:Of main interest in the present work is a quantitative comparison between the phonon deformation potential (PDP) values determined for silicon single crystals by two different calibration methods: (i) a macroscopic method exploiting the stress field developed in a ball-on-ring (biaxial) bending configuration; and (ii) a microscopic method using the residual stress field stored around an indentation print. A comparison between the two methods helps to establish the reliability limits for experimental stress analyses in the (001), (011), and (111) planes of silicon devices by means of polarized Raman spectroscopy. Emphasis is also placed on evaluating the degree of precision involved with using a closed-form equation (i.e., as proposed by other authors), which describes the stress state when different crystallographic planes of the Si sample are loaded in the ball-on- ring jig. A comparison between stress profiles obtained by such equations and those computed by the finite element method (FEM) in the loaded disk reveals a clear discrepancy for the (011) plane. Such a discrepancy could be attributed to elastic coupling and anisotropic effects (particularly relevant along the 〈011〉 direction), which can lead to errors up to 15% in computing the stress field stored in the silicon lattice.

Finite element analysis of surface-stress effects in the Si lattice-parameter measurement

Acoustoelastic determination of local surface stresses in polymethylmethacrylate

X-ray phase contrast topography to measure the surface stress and bulk strain in a silicon crystal

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Direct measurement of strain-dependent solid surface stress

Elasticity Of Si Calculated With A Lattice Dynamics Model

Deformation Potentials of Si-Doped Gaas from Microscopic Residual Stress Fields

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

The Influence Of Surface Effects On Size-Dependent Mechanical Properties Of Silicon Nanobeams At Finite Temperature

Measuring Lattice Parameter of Iron Silicides Using X-Ray Bragg-surface Diffraction

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Polarized Raman Spectroscopy Clarifies the Effect of Crystal Anisotropy on Elastic Stress Fields Developed on the Surface of Silicon Single‐crystal

Semiempirical Approach for Calculating Surface Stress: Application Toas/si(001)2×1

Validating Raman Spectroscopic Calibrations of Phonon Deformation Potentials in Silicon Single Crystals: A Comparison Between Ball-on-ring and Micro-Indentation Methods

Analysis of Lattice Strains Measured under Nonhydrostatic Pressure

Lattice Contraction and Surface Stress of Fcc Nanocrystals

Defocused travelling-fringes in scanning triple-Laue x-ray interferometry

X-ray measurement of elastic strain and lattice constant of diffused silicon

Investigation of the Surface Stress in SiC Nanocrystals by In-situ High Pressure Powder Diffraction Technique

On the Bending of Unconstrained Thin Crystalline Plates Caused by the Change in Surface Stress