Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Samuel Tardif,Alban Gassenq,Kevin Guilloy,Nicolas Pauc,Guilherme Osvaldo Dias,Jean-Michel Hartmann,Julie Widiez,Thomas Zabel,Esteban Marin,Hans Sigg,Jérôme Faist,Alexei Chelnokov,Vincent Reboud,Vincent Calvo,Jean-Sébastien Micha,Odile Robach,François Rieutord
DOI: https://doi.org/10.48550/arXiv.1603.06370
2016-06-25
Abstract:Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
Materials Science
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