MICROSTRUCTURE AND STRESS PROPERTIES OF RADIO FREQUENCY MAGNETRON SPUTTERING MgF2 FILMS WITH DIFFERENT THICKNESSES

孙兆奇,吕建国,何玉平,宋学萍
DOI: https://doi.org/10.3321/j.issn:0454-5648.2004.06.009
2004-01-01
Abstract:MgF_(2) films with different thickness of 60.7—1 545.0 nm were prepared by radio-frequency magnetron sputtering, and the microstructure and stress distribution of the films were measured and analyzed by means of X-ray diffraction and the laser interference phase-shift technique. Microstructure analysis shows that the MgF_(2) films prepared are in a polycrystalline state with tetragonal structure. The average grain size of the films increases from 3.2 to 14.5 nm as film thickness grows from (420.0) to 1545.0 nm. Analysis on the stress shows that there is a mean stress of the films over a selected area of =30 mm. The mean stress decreases linearly with the increase of the film thickness. When film thickness is over 1 200 nm, the mean stress and the stress difference within the selected area are tending towards to steady respectively.
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