Abstract:Intrinsic microcrystalline silicon has been deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique at different discharge powers and silane concentrations. The results of Raman evidently show that the transition of materials from amorphous to microcrystalline silicon with the discharge power from low to high. To fabricate microcrystalline silicon material, the lower SC needs lower power and the higher SC needs higher power. The results of photo thermal deflection (PDS) measurements also indicate that the high quality of microcrystalline silicon was fabricated because of the low 'sub-band' absorption coefficient, which is generally associated with defect densities. In addition, the results of dark conductivity and photosensitivity also evidently proved that a number of high quality microcrystalline silicon could be deposited by the optimization of experimental parameters. The results of active energy also show that material deposited by us could be used to fabricate solar cells. Preliminary results on the devices are presented: efficiency of approximately 5.3% was reached for 1 mum thick solar cells.

Optical and Photoelectrical Characterization of As-Deposited and Annealed Pecvd Polysilicon Thin Films

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Characterization of Hydrogenated Amorphous Silicon Thin Films Prepared by Pecvd

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

A Study of Raman and Optical Emission Spectroscopy on Microcrystalline Silicon Films Deposited by VHF-PECVD

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

A Combinatorial Analysis of Deposition Parameters and Substrates on Performance of Μc-Si:H Thin Films by VHF-PECVD

Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

Study of microstructure and defects in hydrogenated microcrystalline silicon films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Study on the optical properties of P-doped a-Si:H thin films by spectroscopic ellipsometry

Evolution of Infrared Spectra and Optical Emission Spectra in Hydrogenated Silicon Thin Films Prepared by VHF-PECVD

Preparation of Polycrystalline Silicon Films by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Deposition of Microcrystalline Silicon Thin Films for Solar Cells by Vhf-Pecvd

OPTICAL AND ELECTRICAL PROPERTIES OF ANNEALING SiNx: H THIN FILM

The Microstructure and Optical Properties of P-Type Microcrystalline Silicon Thin Films Characterized by Ex-Situ Spectroscopic Ellipsometry

HIGH GROWTH-RATE DEPOSITION OF HYDROGENATED MICROCRYSTALLINE SILICON THIN FILM WITH VHF-PECVD