New Method for Simulating Silicon Light Cell With Current-Type Boundary Condition

丁扣宝,霍明旭
DOI: https://doi.org/10.3969/j.issn.1004-1699.2004.03.037
2004-01-01
Abstract:A new method for simulating silicon pn-junction light cell was put forward. The basic equations of device are numerically solved under the current-type boundary conditions, and hence the short-circuit current can be obtained to coincide to the practical measurement. On this basis, the effect of the impurity density in substrate on the short-circuit current were studied. This method might be applied in the design optimum of light cell used as a detector.
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