Abstract:Under the external electric field, the voids in polycrystalline interconnect lines will exhibit different morphology evolution when crossing grain boundary. Predicting the void crossing process caused by electromigration is an important aspect to improve the reliability of miniaturized integrated circuits. Based on the basic theoretical framework of microstructural evolution in solid materials, a new multi-phase-field model is established in this paper to simulate the process of void crossing grain boundary under anisotropic surface diffusion caused by electromigration in bicrystal interconnect line. Through asymptotic analysis, the compatibility of the multi-phase-field model with the sharp interface model in the limit case is proven. The corresponding finite-element program is developed and the reliability of the model is verified by comparing the numerical simulation with the theoretical solution. The results indicate that the process of void crossing grain boundary is governed by the crystal orientation and the misorientation difference of two adjacent grains. Under different misorientation differences, the void in (110) crystal orientation has two evolutional bifurcation trends: void splitting and tilting drift, while the void in (100) and (111) crystal orientation always remains as a whole and drifts along the direction of the electric field. The void in (111) crystal orientation is the easiest to cross the grain boundary, the fastest to cross the grain boundary, and the influence of the misorientation difference is minimal. This can prevent the void from being pinned by the grain boundary and extending along the grain boundary to cause failure, so as to effectively improve the reliability of the interconnects and extend the service life of the integrated circuit.

Influence of Damascene Trenches on Grain Growth and Electromigration Behavior of ULSI Cu Lines

Electromigration behavior of 60 nm dual damascene Cu interconnects

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Atomic-Scale Investigation of Electromigration with Different Directions of Electron Flow into High-Density Nanotwinned Copper through In Situ HRTEM

The Effect of Line Width on Stress-Induced Voiding in Cu Dual Damascene Interconnects

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis

Reservoir Effect and the Role of Low Current Density Regions on Electromigration Lifetimes in Copper Interconnects

Simulation on Interplay Between Morphological Evolution and Defect in Polycrystalline TSV During EM

Electrical transport characteristics of atomic contact and nanogap dynamically formed by electromigration

A multi-phase-field model of void crossing grain boundary under electromigration-induced anisotropic surface diffusion in interconnects

Characterization of electromigration-induced short-range stress development in Al(0.25 at. % Cu) conductor line

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Microstructure and growth of Cu hillock on redistribution line under electromigration

Enhanced electromigration resistance through grain size modulation in copper interconnects

Dependence of electromigration caused by different mechanisms on current densities in VLSI interconnects

Simulation of Three Dimensional Grain Growth for Cu-interconnects

Impacts of gate line edge roughness on sub 100nm MOSFETs

The Microstructure and Grain Size of Jet Electroplated Copper Films in Damascene Trench Features

Crystalline Orientation Effect of Single-Grain Sn-Rich Cu Pillar Bumps on Electromigration Lifetime

Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliability enhancement for extremely dilute alloying of manganese oxide