Abstract:Ultra-wide bandgap semiconductor diamond has become a new hope for developing high power devices owing to excellent properties. We have previously demonstrated that the strong Fermi pinning effect is a critical factor limiting its development. This paper proposes terminal engineering to improve the contact quality between Au and diamond by adjusting the electron affinity of the diamond (111) surface using first-principles calculations. Remarkable changes in interfacial polarity can be achieved by inserting different thicknesses of Cubic Boron Nitride (c-BN) with H/F terminals on the diamond (111) surface. The C- x BNH have the lowest negative electron affinity (−3.80 eV ∼ −2.75 eV), whereas C- x NBF supercells have the highest positive electron affinity (4.52 eV ∼ 8.53 eV). Positive charges accumulate at Diamond/ x NB-Au and Diamond/ x BNH-Au interfaces, while negative charges build up at the other interlayers. Furthermore, the tunneling probability of the Diamond/ x NB-Au interfaces is close to 1, indicating an excellent transmission. The ideal p-type and n-type Schottky barrier heights can be achieved by rational design of the c-BN terminated Diamond contact with Au, and desirable ambipolar regulation can be effectively achieved (Diamond/ x NB-Au ( x = 2, 3) and Diamond/ x NBF-Au ( x = 1, 2) for n-type ohmic electrodes and Diamond/ x BNF-Au ( x = 2, 3) for p-type ohmic electrodes). The proposed strategy allows interface polarity optimization by modifying the surface electron affinity, which can be extended to other high-performance ambipolar diamond devices with the rational design of contact metals.

High-Quality Heterojunction Between P-Type Diamond Single-Crystal Film And N-Type Cubic Boron Nitride Bulk Single Crystal

Junction Properties of Nitrogen-Doped Zno Thin Films

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Interface engineering of multilayer cubic boron nitride terminated diamond (111): Rational regulation of Au/diamond Schottky barriers for ambipolar applications

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

A hBN/Ga2O3 pn junction diode

Boron–oxygen Complex Yields N-Type Surface Layer in Semiconducting Diamond

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Photovoltaic Feature of Boron-Doped Nano-Crystalline Carbon Films on Silicon

Diamond /sno2 Heterojunction P-N Diodes with Ion/off of 108 and Breakdown Voltage over 400V

Improved Electrical Transport Properties Of An N-Zno Nanowire/P-Diamond Heterojunction

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Electronic Properties of Vertically Stacked H-Bn/b1-xalxn Heterojunction on Si(100)