Characteristics of BaNbxTi1−xO3 Thin Films Grown by Laser Molecular Beam Epitaxy

L Yan,HB Lu,ZH Chen,SY Dai,YL Zhou,GZ Yang
DOI: https://doi.org/10.1016/s0022-0248(02)01604-4
IF: 1.8
2002-01-01
Journal of Crystal Growth
Abstract:The n-type conductive BaNbxTi1-xO3 (0-01less than or equal toxless than or equal to0.3) thin films with (h00) orientation and a root-mean-square surface roughness of 2.40 Angstrom were grown on SrTiO3 (100) substrates by a computer-controlled laser molecular beam epitaxy. The films with x = 0.3 Nb-doped content show the lowest resistivity of 6.05 x 10(-5) Omega cm at room temperature. This value is three orders of magnitude lower than those reported for sintered, single crystals and thin films of Nb-doped BaTiO3. (C) 2002 Elsevier Science B.V. All rights reserved.
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