Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

A COMPUTATIONAL DESIGN OF Si-BASED DIRECT BAND-GAP MATERIALS

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Dipole-Allowed Direct Band Gap Silicon Superlattices

Computational Design of Silicon-Based Direct-Band Gap Nanostructure: Silicon Nanonet

Silicon-based Heterostructures for Optoelectronic Synaptic Devices

A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

fvs-Si48: a direct bandgap silicon allotrope

Identifying Direct Bandgap Silicon Structures with High-throughput Search and Machine Learning Methods

Helium Incorporation Stabilized Direct-gap Silicides

Application of semi-ab initio method of band structure calculation to semiconductor superlattices

Theoretical prediction of novel two-dimensional auxetic material SiGeS and study of its electronic and optical properties

Two-dimensional SiP: an unexplored direct band-gap semiconductor

Optical Properties of Amorphous Si/Sio2 Superlattice

A New Superior Electronic Properties Si Allotrope for Power Electronic Device Applications

Direct-bandgap emission from hexagonal Ge and SiGe alloys

Experimental Realization of Semiconducting Monolayer Si2Te2 Films

Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study

Silicon Framework-Based Lithium Silicides at High Pressures

Tuning of electronic and optical properties of a predicted silicon allotrope: Hexagonal silicon h 10 -Si

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures