Abstract:For high-speed traveling-wave modulator, impedance match, velocity match and low microwave attenuation are important. But they have different effects on bandwidth for different structure and scheme for quantum well electroabsorption modulator and bulk Mach-Zehnder electrooptic modulator. For bulk Mach-Zehnder electrooptic modulator, the longer active waveguide is needed, and at such situation, according to the normalized gain (or modulation reduction factor) the velocity match and impedance match and low microwave attenuation should be well satisfied to achieve good performance. While for the quantum well electroabsorption modulator, limited by the optical loss, short active waveguide must be used. When the device length is largely reduced match requirement is not so strict and it is also difficult to achieve good match. Low terminator electroabsorption modulator is reported recently. Its concept could be inferred from the normalized gain formula. And some technology tendency in traveling-wave electroabsorption and Mach-Zehnder modulator could be also obtained and could explain series of experiment. From calculation and experiment the low impedance and low terminator could expand the bandwidth by slight mismatch. The relation of modulator characteristic impedance, microwave phase velocity and microwave attenuation is not much considered for simplification. The results are useful to design and optimize modulator.

Microwave Properties of Coplanar Strips of MQW Mach-Zehnder Modulator with Finite Metallization Thickness and Conductivity

Microwave Characteristics Analysis of Mach-Zehnder GaAs/GaAlAs Traveling-Wave Optical Modulators

New Designed Mach-Zehnder GaAs Traveling-wave Interferometer Modulators Based on the Analytical Numeral Results of the Method of Line

Different Effects on Bandwidth for Traveling-Wave Quantum Well Electro-Absorption Modulator and Bulk Mach-Zehnder Electric-Opto Modulator

Microwave characteristics analysis of coplanar electrodes in III-V semiconductors traveling-wave modulators

Recent Progress on Ultrahigh Speed Optical Modulator

Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser

The Mach-Zehnder Modulator Based on Bi-Layer Graphene-Silicon-waveguide

GaAs/GaAlAs traveling-wave directional coupler optical modulators: I. design

The Study of Few-Layer Graphene Based Mach−Zehnder Modulator

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

GaAs/GaAlAs travelling-wave directional coupler modulators: II experiment

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Design and Characterization of Traveling-wave Electrodes for InP-based Rectangular Mach-Zehnder High Speed Electro-optic Modulators

Low-Drive-Power Asymmetric Mach-Zehnder Modulator with Band-Limited Operation

The Optical Waveguide Design Of Quantum Well Electroabsorption Optical Modulator

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

High-Bandwidth Silicon Traveling-Wave Modulator Using Distributed Micro-Capacitors

Low drive voltage optical phase modulator with novel InGaAlAs/InAlAs multiple-quantum-barrier based n-i-n heterostructure.