DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors

Zi-Yu Wang
DOI: https://doi.org/10.3321/j.issn:0372-2112.2002.11.029
2002-01-01
Tien Tzu Hsueh Pao/Acta Electronica Sinica
Abstract:A novel laser diodes driver was introduced. Using only 4 discrete NPN double polysilicon bipolar transistors and one conventional silicon bipolar transistor as active devices, the driver can provide 50 mA modulation current to drive laser diodes for a load of 25 Ω and can provide 2.5 V modulation voltage to drive EA modulators for a load of 50 Ω. The driver has the rise/fall time of less than 100 ps and can be used for bit rate up to 3 Gb/s with the modulation and the bias current of 5-50 mA respectively.
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