Abstract:A quasi-continuous-wave (QCW) laser diode (LD) driver is commonly used to drive diode bars and stacks designed specifically for QCW operations in solid-state lasers. Such drivers are optimized to deliver peak current and voltage pulses to LDs while maintaining low average power levels. As a result, they are widely used in laser processing devices and laser instruments. Traditional high-energy QCW LD drivers primarily use capacitors as energy storage components and pulsed constant-current sources with op-amps and power metal-oxide-semiconductor field-effect transistors (MOSFETs) as their core circuits for generating repeated constant-current pulses. The drawback of this type of driver is that the driver's output voltage needs to be manually adjusted according to the operating voltage of the load before use to maximize driver efficiency while providing a sufficient current. Another drawback is its inability to automatically adjust the output voltage to maintain high efficiency when the load changes during the driver operation. Drastic changes in the load can cause the driver to fail to function properly in extreme cases. Based on the above traditional circuit structure, this study designed a stability compensation circuit and realized a QCW LD driver for driving a GS20 diode stack with a maximum repetition rate of 100 Hz, a constant current of approximately 300 A, a load voltage of approximately 10 V, and a pulse width of approximately 300 μs. In particular, a high-efficiency, load-adaptive driving method was used with the MOSFETs in the critical saturation region (i.e., between the linear and saturated regions), controlling its power loss effectively while achieving maximum output current of the driver. The experiments demonstrated that the driver efficiency could be maintained at more than 80% when the load current varied from 50 to 300 A.

A Kind of High Bit Rate Laser Diodes Driver

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

High Baudrate Short-Reach Communication.

DC～3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors

A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS

A laser source driver in 0.18 <i></i>m SiGe BiCMOS technology for high speed quantum key distribution

A High-Speed 130-nm SiGe BiCMOS Integrated Duobinary Driver for Data Rate Capacity Enhancement in VCSEL-Based Optical Links

A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution

Design of LD Current Drivers of Pump-Modules in Fiber Amplifiers

High-speed Silicon Modulators for the 2 Μm Wavelength Band

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Design and Implementation of a Power Semiconductor-Based Switching Mode Laser Diode Driver

Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

A 10-Gb/s Driver/Receiver ASIC and Optical Modules for Particle Physics Experiments

A Load-Adaptive Driving Method for a Quasi-Continuous-Wave Laser Diode

10-Gbit/s direct modulation of a TO-56-can packed 600-μm long laser diode with 2% front-facet reflectance

High-speed GaN-based Laser Diode with Modulation Bandwidth Exceeding 5 GHz for 20 Gbps Visible Light Communication

A 10 Gbps Driver/Receiver ASIC and Optical Modules for Particle Physics Experiments

An 800G Integrated Silicon-Photonic Transmitter based on 16-Channel Mach-Zehnder Modulator and Co-Designed 5.35pJ/bit CMOS Drivers.