Abstract:With the development of the ultra-large scale integrated circuit (ULSI) technology, CoSi2 has become a leading candidate for contact materials in electronic devices due to its linewidth-independent low resistivity and small lattice mismatch with Si substrate [1]. Among many methods to fabricate epitaxial CoSi2 films, solid phase epitaxy (SPE) is a very important one [2]. Ti-interlayer mediated epitaxy (TIME) [3] and oxide mediated epitaxy (OME) [4] can be regarded as improvements of SPE. In SPE, the Co film is usually deposited at room temperature and the as-deposited Co films are usually amorphous [2, 5]. During low temperature annealing, the crystallization of Co film can be observed; yet during high temperature annealing, especially rapid thermal annealing (RTA), this process cannot be observed [5]. So in high temperature RTA, we cannot tell whether the Co film has undergone crystallization before the formation of silicides. This fact suggests that the formation of silicides during high temperature RTA may be the result of the reaction between amorphous Co film and Si substrate, not the reaction between crystalline Co film and Si substrate. Based on this consideration, we expect the reaction between real crystalline Co film and Si substrate to produce some results different from previous reports. Si(111) substrate was chosen because the epitaxial growth of CoSi2 film on Si(111) is not so complicated as that on Si(100). The purpose of this letter is to study the reaction between crystalline Co film and Si(111) substrate. n-Typed Si(111) with a resistivity of 4‐4.8� · cm were ultrasonically cleaned in acetone, rinsed in deionized water, etched in HF : H2O2(1 : 1), rinsed in deionized water again, and then loaded into the e-gun evaporation system. The base pressure of the system was 1.2 × 10 −8 Torr. During the deposition process, the vacuum level was 2.3 × 10 −7 Torr. Crystalline Co films of 150 nm thickness were obtained by heating the substrate to 150 ◦ C during the e-gun evaporation. Subsequent ex situ RTA was carried out in a high vacuum of 3.0 × 10 −6 Torr at temperatures between 470 and 850 ◦ C for 3 min. X-ray diffraction (XRD) was used to investigate the phases and their preferential orientations formed during the Co-Si reaction. The composition of the film was analyzed by auger electron spectroscopy(AES) and the crystalline properties of CoSi2 films were evaluated by reflection high-energy electron diffraction (RHEED).

Coating on SiC Surface by Solid State Reaction With Cr Powder

The interfacial stability of the coated-SiC/Fe couple

Phase Reactions and Diffusion Path of the SiC/Cr System

Microstructures of Si-Cr Co-Depositing Coatings Prepared on Ti-Nb-Si Based Ultrahigh Temperature Alloy

Microstructure and formation mechanism of the Si-Cr dual-alloyed coating prepared by pack-cementation

Study on the solid state reaction between crystalline Co film and Si(1 1 1) substrate

The High Temperature Thermal Shock Performance of Si-Ti-Cr Silicide System Coating on Nb-Hf Alloy Surface in Atmosphere and Vacuum

High Temperature Oxidation Behavior of SiC Coating Materials

Microstructural and Tribological Properties of Cold Sprayed High Content Sicp/Al Coating by Sicp Mild-Oxidation Treatment

Surface Modification Of Nano-Sic Powders By Coating With Heterogeneous Nucleation Process

Aes Study On The Interface Diffusion And Reaction Between Cr Layer And Si3n4/Si Substrate

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Oxidation protection of SiC-coated C/C composites by SiC nanowire-toughened CrSi 2-SiC-Si coating

Preparation of crystalline SiC coating from Si and C powder mixture using laser sublimation technique

SiC Nanowire-Induced Fabrication of Fine-Grained and Highly-Density SiC Coating by Pressure-Less Reactive Sintering

Synthesis of Al4SiC4 by solid reaction

Fabrication of CrSi2/MoSi2/SiC–Mo2C Gradient Composite Coating on Mo Substrate and the Stabilizing Effect of Cr on the Coating's Anti-Oxidation Properties

Solid phase reaction between crystalline, (002) oriented Co film and Si(111) substrate: Preferential orientations of silicides

Effect of the Incorporation of SiC Nanowire with Double Protective Layers on SiC Coating for C/C Composites

Deposition behavior and mechanism of thermal sprayed SiC

Fabrication of plasma-sprayed TiC-Ti5Si3-Ti3SiC2 composite coatings from the annealed Ti/SiC powders