Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide

FF Li,JJ Xu,YF Kong,H Huang,GY Zhang,CH Yang,YH Xu

DOI: https://doi.org/10.1088/0256-307x/18/12/316

2001-01-01

Abstract:Light-induced absorption in the nominally pure bismuth silicon oxide is investigated experimentally and the result shows that it consists of transient and persistent parts. The experimental evidence is analysed based on the model of three groups of trap (donor) centres.

What problem does this paper attempt to address?

Decay Of Light-Induced Absorption In Barium Titanate

Jiasen Zhang,S. X. Dou,Hong Gao,Xing Wu,Peixian Ye

DOI: https://doi.org/10.1117/12.253232

1996-01-01

Abstract:The decay processes of light-induced absorption in one undoped and two Ce-doped BaTiO 3 crystals were observed. Two decay times were found, they had not a strong dependence on intensity in our experiment. We present a model with two different shallow trap centers to explain the experimental results. The theory and experimental results agree well. The light-induced absorption coefficients and decay times corresponding to the two shallow levels are also given.
Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Shi Wanquan,Hou Qingrun,Liu Xuejun,Liu Shixiang,Fu Zhengqing,Lu Liwu,Li Yuanjing

DOI: https://doi.org/10.1088/0256-307x/9/9/008

1992-01-01

Chinese Physics Letters

Abstract:We have studied the light induced rapid thermal diffusion of boron atom in silicon. The samples were heated by the rapid thermal processor. We have carried out spreading resistance and deep level transient spectroscopy (DLTS) measurements. The impurity distribution profile is much shallower and steeper than that of conventional thermal diffusion and the diffusion depth can be controlled to 0.1 μm. Several peaks in the deep level transient spectra were detected and the density of these defects ranges from 0.5×1012 to 5.6×1012 /cm3. The passivation and annihilation of these defects have been studied. We have also made the planar diode whose diameter is 500 μm. The reverse current and the back breakdown voltage of the planar diode are 10-9 A and 80 V respectively.
Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices.

Hong-Tao Sun,Fumiaki Shimaoka,Yuji Miwa,Jian Ruan,Minoru Fujii,Jianrong Qiu,Shinji Hayashi

DOI: https://doi.org/10.1364/OL.35.002215

IF: 3.6

2010-01-01

Optics Letters

Abstract:We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources. (C) 2010 Optical Society of America
Broadband NIR Luminescence from a New Bismuth Doped Ba_2B_5O_9Cl Crystal: Evidence for the Bi^0 Model

Jiayu Zheng,Mingying Peng,Fengwen Kang,Renping Cao,Zhijun Ma,Guoping Dong,Jianrong Qiu,Shanhui Xu

DOI: https://doi.org/10.1364/oe.20.022569

IF: 3.8

2012-01-01

Optics Express

Abstract:A new type of bismuth doped Ba(2)B(5)O(9)Cl crystal is reported to exhibit broadband near infrared (NIR) photoluminescence at room temperature, which has been identified here originating from elementary bismuth atom. Rietveld refining, static and dynamic spectroscopic properties reveal two types of Bi(0) centers in the doped compound due to the successful substitution for two different nine-coordinated barium lattice sites. These centers can be created only in a reducing condition, and when treated in air and N(2)/H(2) flow in turn, they can be removed and restored reversely. As the dwelling time is prolonged in N(2)/H(2) at high temperature, conversion from Bi(2+) to Bi(0), as reflected by changes of their relative emission intensities, is witnessed in the crystal of Ba(2)B(5)O(9)Cl:Bi. The lifetime of the NIR luminescence was observed in a magnitude of ~30 μs, rather different from bismuth doped either glasses or crystals reported previously.
Light-induced charge-transport in undoped LiNbO3 crystals

F. Lüdtke,N. Waasem,K. Buse,B. Sturman

DOI: https://doi.org/10.1007/s00340-011-4615-z

2011-07-29

Applied Physics B

Abstract:Light-induced charge transport in nominally undoped LiNbO3 crystals essentially differs from that in Fe- and Cu-doped crystals. Furthermore, it is of relevance for numerous effects ranging from optical damage to domain reversal. Here, we review the state of the art of the studies of light-induced charge transport in this important material. This includes a summary of the facts known for doped crystals, a description of the experimental methods relevant to undoped crystals, a summary of the main experimental data for this material, especially the data on the intensity dependences, presentation of the methods of purification from unwanted photo-active electrons, and a discussion of possible mechanisms responsible for the charge-transport peculiarities.

optics,physics, applied
Anomalous Photoemission in Bismuth-Doped Amorphous Solid Via Selective Reduction and Energy Transfer Mechanism Investigation

Weirong Wang,Chun Jiang

DOI: https://doi.org/10.1016/j.jallcom.2019.153169

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:High speed data transmission requires information system materials with broadband emission. Herein, we report an abnormal broadband near-infrared luminescence behavior in bismuth-doped phosphate glasses. By controlling the melting temperature lower than 1050 degrees C, broad photoluminescence is observed peaking at 800 nm upon excitation at 300, 450, and 674 nm, which is highly different from earlier reports. The three excitation bands are proposed to be derived from at least three Bi-related active centers. Evidences are expounded that a selective reduction process in Bi-doped phosphate glasses when sintered at low temperature. Additionally, the energy transfer from three-valent bismuth ion (Bi3+) to the lower-valent Bi active centers is found and demonstrated for the first time, which is consistent with the relative emission intensities as observed experimentally. The time-resolved fluorescence and structural properties are analyzed in details to interpret the feasible mechanism of this abnormal phenomenon. This work deepens our understanding of the complex origin of bismuth doped materials and may offer a gateway in the pursuit of other excellent photonics materials. The results may also illustrate the potential application of bismuth ion active centers with broadband and tunable luminescence features. (C) 2019 Elsevier B.V. All rights reserved.
Intensity-dependent absorption in doped KNSBN crystals

Yanqiu Li,Shutian Liu,Fanglin Hou,Kebin Xu

1997-01-01

Abstract:Light induced absorption and transparency in Co:KNSBN and heavy reduced Co:KNSBN had been experimentally measured. Light induced absorption increases to saturate value of 6.5/cm in heavy reduced Co:KNSBN crystal, and decreases to a saturate value of 3.2/cm in Co:KNSBN crystal. The transparent intensity of probe beam presents a oscillation behavior when the pumping beam switches of in heavy reduced Co:KNSBN crystal. These behaviors were explained by a theory of two types of charge carriers with multiple traps. Finally, it is predicted that the light induced absorption and transparency should be useful for making spatial intensity distributions more homogeneous and incoherent signal amplification.
Luminescence properties of bismuth-doped lime silicate glasses

Jinjun Ren,Jianrong Qiu,Danping Chen,Xiao Hu,Xiongwei Jiang,Congshan Zhu

DOI: https://doi.org/10.1016/j.jallcom.2007.09.026

IF: 6.2

2008-01-01

Journal of Alloys and Compounds

Abstract:Luminescences from bismuth-doped lime silicate glasses were investigated. Luminescences centered at about 400, 650, and 1300nm were observed, excited at 280, 532 and 808nm, respectively. These three luminescence bands arise from three different kinds of bismuth ions in the glasses. The visible luminescences centered at 400 and 650nm arise from Bi3+, and Bi2+, respectively. The infrared luminescences cover the wavelength range from 1000 to 1600nm when exited by an 808nm laser diode. The full width at half maximum (FWHM) of the infrared luminescences is more than 205nm. The intensity of the infrared luminescence decreases with the increment in CaO content. We suggest that the infrared luminescences might arise from Bi+. Such broadband luminescences indicate that the glasses may be potential candidate material for broadband fiber amplifiers and tunable lasers.
Broadband Near-Infrared Emission from Bismuth-Doped Multilayer Films

Satoshi Morimoto,Minoru Fujii,Hong-Tao Sun,Yuji Miwa,Kenji Imakita,Jianrong Qiu,Shinji Hayashi

DOI: https://doi.org/10.1063/1.4757579

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Multilayer structures consisting of bismuth (Bi)-doped silica thin films and different kinds of spacer, i.e., Si, silica, Si-rich silica, layers are grown and the luminescence properties are studied. When samples were annealed at a low temperature, Bi-related near infrared active centers (BRACs) were formed at interfaces between Bi-doped silica and Si-rich silica (or silicon) due to the reduction of Bi3+ to BRACs by silicon. On the other hand, films annealed at a high temperature showed similar emission behaviors to bulk glasses. The results demonstrated here establish a new strategy for the control of BRACs and building peculiar Bi activated film structures.
Occurrence of Metallic Bismuth in Bi2Sr2CuOx Crystals Irradiated by N+ Ions

LB WANG,XG LI,WB WU,XM LIU,JS ZHU,Z CHEN,GE ZHOU,YH ZHANG

DOI: https://doi.org/10.1016/0921-4534(94)90838-9

1994-01-01

Physica C Superconductivity

Abstract:X-ray photoemission spectroscopy analyses reveal that N+ ion irradiation causes the occurrence of metallic bismuth in the Bi2Sr2CuO(x) crystals. X-ray diffraction shows that the metallic bismuth results in the disappearance of some modulated peaks. Strontium may be replaced by other ions.
Near-IR luminescence in bismuth-doped AgCl crystals

V. G. Plotnichenko,D. V. Philippovskiy,V. O. Sokolov,V. F. Golovanov,G. V. Polyakova,I. S. Lisitsky,E. M. Dianov

DOI: https://doi.org/10.1364/OL.38.002965

2013-08-03

Abstract:Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two exponential components corresponding to the lifetimes of 1.5 and 10.3mks is excited mainly by 0.39--0.44mkm radiation. Computer modeling of probable Bi-related centers in AgCl lattice is performed. On the basis of experimental and calculation data a conclusion is drawn that the IR luminescence can be caused by Bi^+ ion centers substituted for Ag^+ ions.

Materials Science,Optics
Sensitized Broadband Near-Infrared Luminescence from Bismuth-Doped Silicon-Rich Silica Films.

Yuji Miwa,Hong-Tao Sun,Kenji Imakita,Minoru Fujii,Yu Teng,Jianrong Qiu,Yoshio Sakka,Shinji Hayashi

DOI: https://doi.org/10.1364/ol.36.004221

2011-01-01

Abstract:Developing Si compatible optical sources has attracted a great deal of attention owing to the potential for forming inexpensive, monolithic Si-based integrated devices. In this Letter, we show that ultra broadband near-IR (NIR) luminescence in the optical telecommunication window of silica optical fibers was obtained for Bi-doped silicon-rich silica films prepared by a co-sputtering method. Without excess Si, i.e., Bi-doped pure silica films, no luminescence was observed in the NIR range. A broad Bi-related NIR photoluminescence appears when excess Si was doped in the Bi-doped silica. The luminescence properties depended strongly on the amount of excess Si and the annealing temperature. Photoluminescence results suggest that excess Si acts as an agent to activate Bi NIR luminescence centers and also as an energy donor to transfer excitation energy to the centers. It is believed that this peculiar structure might find some important applications in Si photonics.
Air-stable bismuth sulfobromide (BiSBr) visible-light absorbers: optoelectronic properties and potential for energy harvesting

Xiaoyu Guo,Yi-Teng Huang,Hugh Lohan,Junzhi Ye,Yuanbao Lin,Juhwan Lim,Nicolas Gauriot,Szymon Zelewski,Daniel Darvill,Huimin Zhu,Akshay Rao,Iain McCulloch,Robert L Z Hoye

DOI: https://doi.org/10.1039/d3ta04491b

IF: 11.9

2023-10-12

Journal of Materials Chemistry A

Abstract:ns 2 compounds have recently attracted considerable interest due to their potential to replicate the defect tolerance of lead-halide perovskites and overcome their toxicity and stability limitations. However, only a handful of compounds beyond the perovskite family have been explored thus far. Herein, we investigate bismuth sulfobromide (BiSBr), which is a quasi-one-dimensional semiconductor, but very little is known about its optoelectronic properties or how it can be processed as thin films. We develop a solution processing route to achieve phase-pure, stoichiometric BiSBr films ( ca. 240 nm thick), which we show to be stable in ambient air for over two weeks without encapsulation. The bandgap (1.91 ± 0.06 eV) is ideal for harvesting visible light from common indoor light sources, and we calculate the optical limit in efficiency ( i.e. , spectroscopic limited maximum efficiency, SLME) to be 43.6% under 1000 lux white light emitting diode illumination. The photoluminescence lifetime is also found to exceed the 1 ns threshold for photovoltaic absorber materials worth further development. Through X-ray photoemission spectroscopy and Kelvin probe measurements, we find the BiSBr films grown to be n-type, with an electron affinity of 4.1 ± 0.1 eV and ionization potential of 6.0 ± 0.1 eV, which are compatible with a wide range of established charge transport layer materials. This work shows BiSBr to hold promise for indoor photovoltaics, as well as other visible-light harvesting applications, such as photoelectrochemical cells, or top-cells for tandem photovoltaics.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Light Emission Redistribution Owing to Nonlinearity in ITO/LiNbO<inf>3</inf>

Jingwen Zhang,Dewang Huo,Chao Wang,Hua Zhao

2018-01-01

Abstract:UV and short wave visible emission enhancement was observed from indium-tin-oxide coated y-cut Fe: LiNbO 3 , suggesting nonlinearity plays a role due to interface plasmon polaritons were excited in electrostatic modified nanometric layer of free electron gas.
Luminescence properties of nickel and bismuth co-doped barium aluminosilicate glasses

Jiaxing Bao,Shifeng Zhou,Gaofeng Feng,Xi Wang,Xvsheng Qiao,Jianrong Qiu

DOI: https://doi.org/10.1016/j.jallcom.2007.02.012

IF: 6.2

2008-01-01

Journal of Alloys and Compounds

Abstract:We report the effect of NiO on the luminescence properties of bismuth-doped barium aluminosilicate glasses. Visible luminescence at about 425nm and broadband infrared luminescence at about 1330nm are observed from the bismuth-doped barium aluminosilicate glasses when excited by ultraviolet light and 808nm laser diode, respectively. The intensity of the two emissions decreases with increasing NiO concentration. The mechanisms of the observed phenomena are discussed.
Molecular Engineering toward an Enlarged Optical Band Gap in a Bismuth Sulfate via Homovalent Cation Substitution

Yingwei Lu,Xingxing Jiang,Chao Wu,Lin Lin,Zhipeng Huang,Zheshuai Lin,Mark G. Humphrey,Chi Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.1c00269

IF: 4.6

2021-04-06

Inorganic Chemistry

Abstract:Materials capable of generating coherent short-wave (<300 nm) light have attracted extensive scientific and technical interest due to their wide utilization in laser research. In this study, a the rare-earth-metal sulfate NaCe(SO4)2(H2O) (NCSO) was synthesized through a hydrothermal method, while NaBi(SO4)2(H2O) (NBSO) was successfully obtained via a homovalent cation substitution of the parent compound NCSO under hydrothermal conditions. The space groups of crystalline NCSO and NBSO are P3121 and P3221, respectively. Both compounds have similar connectivities which feature a three-dimensional channel structure formed by asymmetric [CeO9]15–/[BiO9]15– tricapped trigonal prisms and distorted [SO4]2– tetrahedra. The introduction of Bi3+ with larger ionic radii and stereochemically active lone-pair electrons simultaneously enhanced the SHG effect and band gap of NBSO in comparison to its parent compound NCSO. In contrast to NCSO, which possesses a narrow energy band gap (2.46 eV), NBSO displays the largest energy band gap (4.54 eV) among the reported bismuth sulfate NLO materials. Powder frequency-doubling-effect measurements exhibit that NCSO and NBSO possess phase-matchable SHG responses of 0.2 × KDP and 0.38 × KDP at 1064 nm, respectively. Theoretical studies have been implemented to further elucidate the structure–performance relationships of the two compounds. Experimental and theoretical studies both demonstrate that NBSO may be a promising nonlinear material applied in the short-wavelength region.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.1c00269?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c00269</a>.Selected bond lengths and angles, bond valence sumd and hydrogen-bonding interactions, PXRD, IR, TG, EDS, calculated structures, and calculated refractive indexes (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.1c00269/suppl_file/ic1c00269_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, inorganic & nuclear
Photo-induced electronic and spin topological phase transitions in monolayer bismuth

Bo Peng,Gunnar F. Lange,Daniel Bennett,Kang Wang,Robert-Jan Slager,Bartomeu Monserrat

DOI: https://doi.org/10.1103/PhysRevLett.132.116601

2024-03-15

Abstract:Ultrathin bismuth exhibits rich physics including strong spin-orbit coupling, ferroelectricity, nontrivial topology, and light-induced structural dynamics. We use \textit{ab initio} calculations to show that light can induce structural transitions to four transient phases in bismuth monolayers. These light-induced phases exhibit nontrivial topological character, which we illustrate using the recently introduced concept of spin bands and spin-resolved Wilson loops. Specifically, we find that the topology changes via the closing of the electron and spin band gaps during photo-induced structural phase transitions, leading to distinct edge states. Our study provides strategies to tailor electronic and spin topology via ultrafast control of photo-excited carriers and associated structural dynamics.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics,Computational Physics,Optics
Superbroad visible to NIR photoluminescence from Bi + evidenced in Ba 2 B 5 O 9 Cl: Bi crystal

Jiayu Zheng,Linling Tan,Liping Wang,Mingying Peng,Shanhui Xu

DOI: https://doi.org/10.1364/OE.24.002830

IF: 3.8

2016-01-01

Optics Express

Abstract:The nature of bismuth NIR luminescence is essential to develop the bismuth doped laser materials with high efficiency and desirable emission wavelength, and it, thereby, receives rising interests. Our previous work reported the Bi-0 luminescence from Ba2B5O9Cl: Bi with a lifetime of similar to 30 mu s and the conversion of Bi2+ to Bi-0. This work found indeed the conversion could be enabled in the compound by an in situ reduction technique and it, however, happens via an intermediate state of Bi+. Once the ion of Bi+ is stabilized and built into the compound, it can luminesce in a super broad spectral range from 600 to 1200nm with a lifetime longer than 1ms, due to the cascade transitions from P-3(2) and P-3(1) to P-3(0). This is completely different from Bi-0 and Bi2+ in the compound, and it has never been noticed before. We believe this work can help us better understand the complex nature of bismuth luminescence. (C) 2016 Optical Society of America
Direct and indirect optical absorptions of cubic BAs and BSb

Yanfeng Ge,Wenhui Wan,Xitong Guo,Yong Liu

DOI: https://doi.org/10.1364/OE.378374

2020-01-06

Abstract:Recently, boron arsenide (BAs) has been measured with high thermal conductivity in the experiments, great encouragement for low-power photoelectric devices. Hence we systematically investigate the direct and indirect optical absorptions of BAs and BSb by using first-principles calculations. We obtain the absorption onset corresponding to the value of indirect bandgap by considering the phonon-assisted second-order indirect optical absorption. The temperature-dependent calculations also capture the redshift of absorption onset, enhancement, and smoothness of optical absorption spectra. Moreover, in order to introduce the first-order absorption in the visible range, the doping effect of congeners is studied without the assist of phonon. It is found that the decrease of local direct bandgap derives from either the decrease of bonding-antibonding repulsion of p orbital states by the heavier III group elements or the similar influence of lighter V group elements on the s orbital states. Thus, the doping of congeners can improve the visible optical absorptions.
Experimental and Theoretical Studies of Photoluminescence from Bi82+ and Bi53+ stabilized by [AlCl4]- in Molecular Crystals

Hong-Tao Sun,Yoshio Sakka,Naoto Shirahata,Hong Gao,Tetsu Yonezawa

DOI: https://doi.org/10.48550/arXiv.1202.5395

2012-02-24

Materials Science

Abstract:The photophysical properties of Bi82+ and Bi53+ polycations stabilized by [AlCl4]- have been studied experimentally and theoretically. The obtained product was thoroughly evaluated by powder X-ray diffraction and photoluminescence spectroscopy, making it clear that both Bi82+ and Bi53+ contribute to the observed broad near-infrared emission. Furthermore, it was revealed that Bi82+ polycation mainly results in the emission peaking at ca. 1180 nm, while Bi53+ the longer-wavelength emission. The following quantum chemistry calculation on Bi82+ polycation helps us attribute some observed excitation bands in the visible spectral range to specific electronic transitions of bismuth polycations. It is believed that systematical investigation of structural and luminescent properties as well as detailed quantum chemistry calculation of molecular crystals containing such kinds of bismuth units allows us to obtain a clearer picture on bismuth-related photophysical behaviors, which not only serve to solve the confusions on the luminescence origin of bismuth in other material systems such as bulk glasses, glass fibers and conventional crystals, but also is helpful to develop novel applicable broadband tunable laser mediums.

Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide

Decay Of Light-Induced Absorption In Barium Titanate

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices.

Broadband NIR Luminescence from a New Bismuth Doped Ba_2B_5O_9Cl Crystal: Evidence for the Bi^0 Model

Light-induced charge-transport in undoped LiNbO3 crystals

Anomalous Photoemission in Bismuth-Doped Amorphous Solid Via Selective Reduction and Energy Transfer Mechanism Investigation

Intensity-dependent absorption in doped KNSBN crystals

Luminescence properties of bismuth-doped lime silicate glasses

Broadband Near-Infrared Emission from Bismuth-Doped Multilayer Films

Occurrence of Metallic Bismuth in Bi2Sr2CuOx Crystals Irradiated by N+ Ions

Near-IR luminescence in bismuth-doped AgCl crystals

Sensitized Broadband Near-Infrared Luminescence from Bismuth-Doped Silicon-Rich Silica Films.

Air-stable bismuth sulfobromide (BiSBr) visible-light absorbers: optoelectronic properties and potential for energy harvesting

Light Emission Redistribution Owing to Nonlinearity in ITO/LiNbO<inf>3</inf>

Luminescence properties of nickel and bismuth co-doped barium aluminosilicate glasses

Molecular Engineering toward an Enlarged Optical Band Gap in a Bismuth Sulfate via Homovalent Cation Substitution

Photo-induced electronic and spin topological phase transitions in monolayer bismuth

Superbroad visible to NIR photoluminescence from Bi + evidenced in Ba 2 B 5 O 9 Cl: Bi crystal

Direct and indirect optical absorptions of cubic BAs and BSb

Experimental and Theoretical Studies of Photoluminescence from Bi82+ and Bi53+ stabilized by [AlCl4]- in Molecular Crystals