Abstract:For phosphor-converted white LEDs (pc-WLEDs) based on UV chips, it is essential to search for highly efficient phosphors that have broadly tunable emissions and minimal excitation in the visible range. This would allow the designer of pc-WLEDs to select the desirable emission wavelength and, thereby, fabricate the device with color perception comfortable for the human eye. Conventional rare earth schemes, for instance Ce3+ or Eu2+ doped phosphors, can be tuned in emission wavelengths, but they cannot overcome the severe intrinsic excitation in the range from blue to green. We report here that Bi3+, the valence of which is confirmed by X-ray photoelectron spectra, exhibits almost no excitation in the visible range and has an extremely broad emission covering the full visible spectral range with internal quantum efficiency up to 75% when substituted into the solid solution compounds (Y,Lu,Sc) VO4:Bi. When the crystal field around Bi3+ is tuned by gradual substitution of smaller lanthanide ions for larger lanthanide ions in solid solution, the emission peak position can be modulated linearly between 566 nm and 635 nm due to the susceptibility of bismuth naked 6s electrons to the local environment. In accordance with Rietveld refining results, static and transient photoluminescence spectra reveal the existence of a single type of Bi3+ emission center in the sample, and energy transfer from VO43- group to Bi3+ upon excitation into the charge transfer state of VO43- groups. The mechanism of concentration quenching of Bi3+ emission occurs possibly due to dipole-quadrupole rather than exchange interactions. This work shows the potential application of bismuth doped samples in UV converted pc-WLEDs.

Superbroad visible to NIR photoluminescence from Bi + evidenced in Ba 2 B 5 O 9 Cl: Bi crystal

Broadband NIR Luminescence from a New Bismuth Doped Ba_2B_5O_9Cl Crystal: Evidence for the Bi^0 Model

Ultra-broadband Red to NIR Photoemission from Multiple Bismuth Centers in Sr2B5O9Cl:Bi Crystal.

Broadband NIR photoluminescence from Bidoped Ba2P 2O7 crystals: Insights into the nature of NIR-emitting Bismuth centers

Superbroad Near-to-mid-infrared Luminescence from Bi_5 ^3+ in Bi_5(AlCl_4)_3

Recent Advances in Super Broad Infrared Luminescence Bismuth-Doped Crystals

Broadband NIR emission from multiple Bi centers in nitridated borogermanate glasses via tailoring local glass structure

Bi-doped BaF2 Crystal for Broadband Near-Infrared Light Source.

Visible and Near-Infrared Emission in Ba<sub>3</sub>Sc<sub>4</sub>O<sub>9</sub>:Bi Phosphor: An Investigation on Bismuth Valence Modification

In Situ Instant Generation of an Ultrabroadband Near-Infrared Emission Center in Bismuth-Doped Borosilicate Glasses Via a Femtosecond Laser

Photoluminescence from Bi-5(Gacl4)(3) Molecular Crystal

Abnormal Bi3+-Activated NIR Emission in Highly Symmetric XAl12O19 (X = Ba, Sr, Ca) by Selective Sites Occupation

Origin of Broad NIR Photoluminescence in Bismuthate Glass and Bi-doped Glasses at Room Temperature.

Abnormal NIR photoemission from bismuth doped germanophosphate photonic glasses

Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices.

Ultrabroadband Near-Infrared Luminescence and Efficient Energy Transfer in Bi and Bi/Ho Co-Doped Thin Films

Broadband Near-Infrared Luminescence from Gamma-Ray Irradiated Bismuth-Doped Y4geo8 Crystals

Ultrabroad NIR luminescence and energy transfer in Bi and Er/Bi co-doped germanate glasses.

Strategy for developing thermal-quenching-resistant emitting and super-long persistent luminescence in BaGa2O4:Bi3+

Broadly Tuning Bi3+ Emission Via Crystal Field Modulation In Solid Solution Compounds (Y,Lu,Sc) Vo4:Bi For Ultraviolet Converted White Leds

Bismuth-doped zinc aluminosilicate glasses and glass-ceramics with ultra-broadband infrared luminescence