Magnetic Field Sensing Film (ni 0.81 Fe 0.19 ) 0.66 Cr0.34/Ni 0.81 Fe 0.19

XF Yang,ZL Peng,HW Liao,ZY Li
DOI: https://doi.org/10.1117/12.440234
2001-01-01
Abstract:Anisotropic magnetoresistance (AMR) effect thin film sensor has a very wide prospect in application. In this paper, we studied the structure, the AMR and the size effect of the Permalloy film with (Ni0.81Fe0.19)(0.66)Cr-0.34 layer as buffer layer The resistance of NiFeCr is. larger than that of Ta and has the same face-cubic structure as NiFe, which could depress the current shunting effectively and be benefit to the formation of the well-textured NiFe layer. The measurements of XRD and AFM showed that, the specimens with (Ni0.81Fe0.19)(0.66)Cr-0.34 and Ta buffer have close surface roughness, while the former had more textured structure. DeltaR/R decreased and the saturation field increased with the reduction of the width of the AMR stripes etched by ion beam. However, the magnetic field sensitivity could still reach 0.16%/Oe when the width reduce to 30 mum and could correctly respond to an alternative magnetic field.
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