Abstract:Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Theoretic and Experimental Study on Micro Bulk Defects in Semiconducting Materials by Laser Scanning Analysis Technology

Study on Micro Bulk Defects Detection in MEMS Components

Theoretical and experimental study of laser detecting technique for micro bulk defects in silicon

New laser non-destructive method of detecting micro/nano bulk defects in silicon materials

Numerical simulation research and applications on scattering imaging of surface defects on optical components

A Novel 3D Evaluation Method for Surface Defects Using Broadband Laser-Generated Rayleigh Waves with Wavenumber Analysis.

Detection of Defects in Optics Based on Scanning

Detecting features of defect metal based on laser ultrasonic technique

Quantitative Detection of Surface Defect Using Laser-Generated Rayleigh Wave with Broadband Local Wavenumber Estimation

A Study of Inner Crack Testing with the Laser Phased Array Method.

Surface defects evaluation system based on electromagnetic model simulation and inverse-recognition calibration method

Width and Depth Gauging of Rectangular Subsurface Defects Based on All-Optical Laser-Ultrasonic Technology

Automatic evaluation system for bulk defects in optics

Laser-generated Rayleigh Wave for Width Gauging of Subsurface Lateral Rectangular Defects

Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors

Diffraction method for inspecting the defects of lenses with various curvature

The Theoretical Analyse of the Surface Acoustic Waves Propagated on the Surface of the Bulk Materials with Subsurface Defect

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

Laser ultrasonic detection for defects of LAM components based on variable time window intensity mapping with adaptive 2σ thresholds

Composite scattering characteristics analysis of micro-ellipsoidal periodic structure optical surface and microdefects

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope