Atomic Force Microscope Study of the Structure of Short-Wavelength Laser Static Recording Bits in TeOx Thin Film

李青会,孙洁林,王海凤,干福熹
DOI: https://doi.org/10.3321/j.issn:0253-2239.2001.10.007
2001-01-01
Abstract:Monolayer TeOx thin film was deposited on K9 glass substrates by vacuum evaporation. By adopting a specific locating method, atomic force microscopy (AFM) can be used to analyze the structure of short-wavelength laser static recording bits, which are recorded at different writing power in the film. It was found that the film has good writing sensitivity, and high reflectivity contrast can be obtained at a writing power of 1.5 mW. The bits are characterized by obvious hollows and mounds which are enhanced with the increase of writing power. The bit topography is related to the change in reflectivity contrast before and after recording, which is caused by a specific laser pulse. This study reveals that AFM has the analytical ability for improving the storage performance, such as signal-to-noise ratio and storage density of optical storage media.
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