Abstract:Cobalt-phosphorus (Co-P) film is an excellent candidate for pad surface treatment in the process of under bump metallization (UBM) owing to its good wettability and diffusion-resistance. Different formation and growth of intermetallic compounds (IMC) at the Co-P and solder interface gives a variety of solder joint performance with the change of phosphorus (P) content, while the systematic investigation of the effect of P contents on the solid-state diffusion is rare in current studies. In this work, the IMC evolution and growth has been systematically studied using Sn-3.5Ag/Co-P/Cu diffusion systems by varying phosphorus content (0.87 at.% to 20.83 at.% with interval of about 1 at.%) in a controlled manner that is aged at 453 K for 120 hours. The Co-P film formed by electroplating presents a transition from crystalline state to a mixed crystalline-amorphous state, and then to an amorphous state with increasing P content. A good barrier effect is achieved by loading 4 at.% P, resulting a crystalline thin film that has the slowest consumption rate and the thinnest Co-Sn compound (CoSn3) generation during aging compared to other composite formulation. The amorphous Co-P film has poor diffusion barrier performance against Sn and Cu atoms and would quickly convert to Co-Sn-P that is a mixture of CoSn, Co2P and Sn4P3, for the faster diffusion of Sn atoms than the crystalline state. As for mixed state, a thick Co-Sn compound (CoSn3+CoSn4) would form, and the part of film on the solder side would gradually transform into Co-Sn-P. The spalling behavior of Co-Sn-P associated with the P-rich layers inside the mixed film was observed and discussed in detail. The growth rate-controlling process of various compounds is studied using kinetic analysis. The IMC evolution in Sn-Ag/Co-P/Cu systems with different P loadings during aging process is discussed by the model of compound growth based on the phase proportion.

Pb Surfactant-Assisted Co Film Growth on Cu(111)

Direct copper plating on ultra-thin sputtered cobalt film in an alkaline bath

Surface Alloying of Submonolayer Pb on Cu(111) Studied by Photoemission

A Theoretical Study of Surfactant Action in the Layer-by-layer Homoepitaxial Growth of Metals: the Case of in on Cu(111)

Surfactant induced smooth and symmetric interfaces in Cu/Co multilayers

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Surface Alloying Effects in the Growth of Au on Pb(111) Thin Film

Quantized Electronic Structure and Growth of Pb Films on Highly Oriented Pyrolytic Graphite

Surfactant-mediated Layer-by-layer Homoepitaxial Growth Ofcu/in/cu(100)and

MOLECULAR BEAM EPITAXIAL GROWTH AND STRUCTURE OF COBALT FILM ON GaAs(001) SURFACE

Strongly Reduced Ehrlich–Schwoebel Barriers at the Cu (111) Stepped Surface with in and Pb Surfactants

The Evolution of Compounds Growth Between Sn-3.5Ag and Co-P Films with Different Phosphorous Contents

Characterization of the Magnetism and Structure of Metastable Co Films Grown by Electrochemical Epitaxy

Atomistic Insights into the Growth of Bi (110) Thin Films on Cu (111) Substrate

Effect of the Convergence of Cu Cap on the Structure of Co/Cu(111) Film

Growth and Interfacial Interaction of Cu on ZrO2(111) Thin Film

Growth of Cu films on adsorbate-covered Pt(111)

The Growth Mechanism of Co Atoms on Cu Substrates

Interfacial reaction between Sn-Ag-Cu solder and Co-P films with various microstructures

Growth of Ultrathin Cobalt oxide films on Pd(100): Refined Structural Model