Preparation of tin oxide films for micro gas sensors

Jianping Li,Yue Wang,Xiaoguang Gao,Li Wang,Jinghong Han
2000-01-01
Abstract:With the emergence of micro gas sensors, more attention has been paid to semiconducting metal oxide thin films because of their advantages of high sensitivity, low thermal mass and batch production. A comparative study concerning the effect of deposition process on the microstructure and gas sensitivity of SnO 2 thin films has been carried out. It is found that the SnO 2 thin film prepared by the RGTO technique has high sensitivity and long stability, but the process is not compatible with the lift-off technique; the SnO 2 thin film obtained from the thermal oxidation of DC-sputtered Sn film at room the temperature can be patterned by lift-off process, but the film has poor gas sensitive property due to unsuitable Sn/O ratio and microstructure; the SnO 2 thin film deposited by RF sputtering in the Ar/O 2 mixture with the Ar/O 2 ratio of 8:2 is very sensitive to organic vapors, and the film is deposited at room temperature and annealed at the much lower temperature than that of the thermal oxidation. Therefore, the RF sputtering is an ideal process for the preparation of SnO 2 thin films in micro gas sensors.
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