Preparation of NiO-In2O3 Ordered Porous Thin Film Materials with Enhanced N-Propanol Gas Sensing Properties

Zhenyu Yuan,Jingfeng Li,Shan Luo,Haoting Zhang,Fanli Meng
DOI: https://doi.org/10.1109/jsen.2022.3188309
IF: 4.3
2022-01-01
IEEE Sensors Journal
Abstract:In this paper, a metal-semiconductor ordered porous film-based n-propanol gas sensor with high sensitivity, fast response and recovery was prepared by a simple self-assembly method at the gas/liquid interface. In this work, polystyrene microspheres (PSs) with a diameter of 1000 nm were selected as a self-sacrificing template, NiO and In 2 O 3 as semiconductor gas-sensitive materials, and the performance of the prepared sensor was tested. The response of the pure In 2 O 3 thin-film sensor to 100 ppm n-propanol gas is about 11.4 at an operating temperature of 275°C, while the modified NiO-In 2 O 3 thin-film sensor can achieve an exciting response of 60 to 100 ppm of the test gas. In addition, both sensors have ultra-short response and recovery times (3s/4s for pure In 2 O 3 sensors, 2s/8s for NiO-In 2 O 3 sensors). The excellent sensing performance depends mainly on the special structure of the thin film material and the heterojunction formed by doping with NiO.
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