Luminescence Mechanism of Ligand-induced Interface States in Silicon Quantum Dots
Jian Zhou,Fengyang Ma,Kai Chen,Wuyan Zhao,Riyi Yang,Chong Qiao,Hong Shen,Wan-Sheng Su,Ming Lu,Yuxiang Zheng,Rongjun Zhang,Liangyao Chen,Songyou Wang
DOI: https://doi.org/10.1039/d3na00251a
IF: 5.598
2023-06-21
Nanoscale Advances
Abstract:Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield (PLQY). However, the complete physical picture of Si-QDs luminescence is not yet clear and needs to be studied in depth. In this work, considering the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands are calculated based on first principles. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QDs interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. Our findings deepen the understanding of the photoluminescence mechanism of Si-QDs, and provide a direction for future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry