Abstract:Metal chalcogenide thin films have a wide variety of applications and potential uses. Tin(II) sulfide is one such material which presents a significant challenge with the need for high quality SnS, free of oxide materials (e.g., SnO2) and higher tin sulfides (e.g., Sn2S3 and SnS2). This problem is compounded further when the target material exhibits a number of polymorphic forms with different optoelectronic properties. Unlike conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD), which rely heavily on having precursors that are volatile, stable, and reactive, the use of aerosol assisted CVD (AA-CVD) negates the need for volatile precursors. We report here, for the first time, the novel and structurally characterized single source precursor (1), (dimethylamido)(N-phenyl-N′,N′-dimethylthiouriate)tin(II) dimer, and its application in the deposition, by AA-CVD, of phase-pure films of SnS. A mechanism for the oxidatively controlled formation of SnS from precursor 1 is also reported. Significantly, thermal control of the deposition process allows for the unprecedented selective and exclusive formation of either orthorhombic-SnS (α-SnS) or zinc blende-SnS (ZB-SnS) polymorphs. Thin films of α-SnS or ZB-SnS have been deposited onto Mo, fluorine doped tin oxide (FTO), Si, and glass substrates at the optimized deposition temperatures of 375 and 300 °C, respectively. The densely packed polycrystalline thin films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analysis. These data confirmed the phase purity of the SnS formed. Optical analysis of the α-SnS and ZB-SnS films shows distinctly different optical properties with direct band gaps of 1.34 and 1.78 eV, respectively. Furthermore, photoelectrochemical and external quantum efficiency (EQE) measurements were undertaken to assess the optoelectronic properties of the deposited samples. We also report for the first time the ambipolar properties of the ZB-SnS phase.

Preparation and Characterization of Tin Sulfide Ordered Nanohole Array Films

Electrodeposited Metal Sulfide Semiconductor Films with Ordered Nanohole Array Structures

Two-dimensional SnS nanosheets fabricated by a novel hydrothermal method

Hydrothermal Synthesis and Characterization of Novel Aloe-Like SnS2 Nanostructures

Fabrication of Ordered Nanohole Arrays by Anodization of Sn Substrates with Ordered Dimple Patterns Formed Using Porous Alumina Template

Hydrothermal synthesis, characterization and properties of SnS nanoflowers

Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor

A Study on the Preparation and Structure of Cadmium Sulfide Nanoparticulate Organized Assembly System

Atomic layer deposition of SnS2 film on a precursor pre-treated substrate

Characteristics of hydrothermally synthesized SnS2 for thin film use

Preparation and Characterization of CdS Nanowire Arrays by Dc Electrodeposit in Porous Anodic Aluminum Oxide Templates

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

Electrochemical Fabrication of Ordered Bi2s3 Nanowire Arrays

The Synthesis of SnS2 Nanoflakes from Tetrabutyltin Precursor

Preparation and characterization of SnS nanocrystals by a triethanolamine-assisted diethylene glycol solution synthesis

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

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Tin(IV) Sulfide: Novel Nanocrystalline Morphologies