Abstract:Q-carbon, a quenched form of carbon, is a recently discovered carbon structure that has tremendous properties, compatibility, and potential for use in device fabrication and other electronic and mechanical applications. However, the non-equilibrium nature of the synthesis process and a very small window of growth parameters have limited the formation of Q-carbon to only low thermal conductive substrates. This study aims to overcome these limitations through extensive tuning of the parameters of diamond-like-carbon (DLC), the base structure required for the formation of Q-carbon. The as-deposited DLC films demonstrate I D /I G ratios ranging from 0.12 to 1.67, which are obtained through the optimization of laser energy density, rep rate, and deposition temperature during pulsed laser deposition. Utilizing Simulation of Laser Interaction with Materials, pulsed laser annealing (PLA) was used to directly transform the DLC films into Q-carbon while varying the PLA energy density from 0.3 J/cm 2 to 1.2 J/cm 2 . Findings of Q-carbon formation on sapphire using different DLC films assisted in the preparation of a roadmap for overcoming the substrate limitations for Q-carbon formation. Further, Q-carbon is formed on AlN substrates for the direct deposition of diamond films without the requirement of a non-carbon interfacial layer or nanodiamond seeding layer. The large-area and uniform diamond growth on Q-carbon shows well-faceted and five-fold twinned growth with a 70 % improvement in the residual compressive stress of diamond on AlN. Such a method of diamond deposition on AlN provides the opportunity to address the thermal management issues in wide- and ultra-wide bandgap high-power electronic devices.

Investigation of Diamond Films Deposited on Laalo3 Single Crystal Substrates by Hot Filament Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Diamond Film Deposited on A Silica Substrate with A Znoal Intermediate Layer by Hot-Filament Chemical-Vapor-Deposition

Growth of well-adhered and smooth diamond thin films on fused silica substrates

High quality nanocrystalline diamond films grown by RF-HFCVD

Highly Transparent Nanocrystalline Diamond Films On Quartz Substrates

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

NUCLEATION AND GROWTH OF DIAMOND FILM ON POROUS SILICON SUBSTRATE

Heteroepitaxial growth of diamond films on Y3Al5O12 single crystals

Deposition of (100) and (110) Textured Diamond Films on Aluminum Nitride Ceramics via Hot Filament Chemical Vapor Deposition

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Investigation of depositing diamond films and nucleation on alumina substrates by microwave plasma CVD

DIAMOND FILMS GROWTH ON POLYCRYSTALLINE Cu AND PHOSPHORUS DEOXIDIZED Cu

Study of diamond film growth mechanism on porous silicon during hot-filament chemical vapor deposition

Growth and nucleation of diamond-like carbon (DLC) film on aluminum

Synthesis of diamond film on AlN substrate by PCVD

A Study of Interface Structure Between Diamond Film and Silicon Substrate

STUDY OF EPITAXIAL GROWTH OF DIAMOND FILM ON HETERO-MATERIAL SUBSTRATE

Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations

Growth Characteristics of diamond films deposited on Si and W substrates

Growth and Characterization of Diamond Films Deposited by D.c. Discharge Assisted Hot Filament Chemical Vapor Deposition