Abstract:Q-carbon, a quenched form of carbon, is a recently discovered carbon structure that has tremendous properties, compatibility, and potential for use in device fabrication and other electronic and mechanical applications. However, the non-equilibrium nature of the synthesis process and a very small window of growth parameters have limited the formation of Q-carbon to only low thermal conductive substrates. This study aims to overcome these limitations through extensive tuning of the parameters of diamond-like-carbon (DLC), the base structure required for the formation of Q-carbon. The as-deposited DLC films demonstrate I D /I G ratios ranging from 0.12 to 1.67, which are obtained through the optimization of laser energy density, rep rate, and deposition temperature during pulsed laser deposition. Utilizing Simulation of Laser Interaction with Materials, pulsed laser annealing (PLA) was used to directly transform the DLC films into Q-carbon while varying the PLA energy density from 0.3 J/cm 2 to 1.2 J/cm 2 . Findings of Q-carbon formation on sapphire using different DLC films assisted in the preparation of a roadmap for overcoming the substrate limitations for Q-carbon formation. Further, Q-carbon is formed on AlN substrates for the direct deposition of diamond films without the requirement of a non-carbon interfacial layer or nanodiamond seeding layer. The large-area and uniform diamond growth on Q-carbon shows well-faceted and five-fold twinned growth with a 70 % improvement in the residual compressive stress of diamond on AlN. Such a method of diamond deposition on AlN provides the opportunity to address the thermal management issues in wide- and ultra-wide bandgap high-power electronic devices.

Synthesis of diamond film on AlN substrate by PCVD

Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations

Investigation of the thermal conductivity of diamond film on aluminum nitride ceramic

Study on the Properties of Diamond Films on Aluminum Nitride Ceramics

AlN As Interlayer for Effective Thermal Dissipation from Gallium Nitride to CVD Diamond Using Nanocrystalline Diamond Seeding

An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

Thick adherent diamond films on AlN with low thermal barrier resistance

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Integration of diamond-like carbon and AlN for acoustic wave devices

The enhanced GaN deposition on highly N-incorporated diamond substrate

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

Preparation and Mechanical Characterization of Nanocrystalline Diamond Films on Aluminum Oxide Substrates

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Deposition of (100) and (110) Textured Diamond Films on Aluminum Nitride Ceramics via Hot Filament Chemical Vapor Deposition