Properties Of A New Kind Of Msm Structure Gallium Arsenide Detectors

Yi Le,Cheng Li,Hongfang Chen,Yang Zhang,Xiaolian Wang,Ligang Wang,Chuanfen F. Shao,Changxin Shi
1998-01-01
Abstract:Properties of a new kind of double metal contact GaAs semiconductors have been investigated. We measured the spectra of 5.48MeV alpha particles from Am-241, 122keV photons from Co-57 and 2.27MeV MIPs from Sr-90 and compared the cce and FWHM of a 3 x 3mm(2) GaAs detector before and after 1300rad 662keV photons from Cs-137. The test results show that these new Metal-Semiconductor-Metal(MSM) structure semiconductor detectors not only have good particle detection ability at room temperature but also have excellent radiation hardiness.
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