Depth profiling of implanted helium by 16O elastic recoil detection

Peng Wei,Guoqing Zhao,Zhuying Zhou,Liqun Shi,Fujia Yang,Wei Xiang,Siwei Luo
1998-01-01
Abstract:12 Mev 16O ions were used for profile of 4He by elastic recoil detection (ERD). The sample was titanium deposited by vapor on Mo substrate. Helium was introduced in it by 20 and 40 keV implantation. The depth profile of ERD was compared with that of proton non-Rutherford backscattering (PBS). The double-peak profile was found in the sample with 40 keV implantation, but no such profile in the sample with 20 keV implantation. The results were compared with TRIM95 calculation.
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